Effect of SiO2 layers on electroluminescence from Si nanocrystal/SiO2 superlattices prepared using argon ion beam assisted sputtering

Sheng Wen Fu; Hui Ju Chen; Hsuan Ta Wu; Chuan-Feng Shih

doi:10.1016/j.vacuum.2016.01.020

Effect of SiO₂ layers on electroluminescence from Si nanocrystal/SiO₂ superlattices prepared using argon ion beam assisted sputtering

Sheng Wen Fu, Hui Ju Chen, Hsuan Ta Wu, Chuan-Feng Shih

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This study investigated the electroluminescence (EL) properties of Si-rich oxide (SRO)/SiO₂ superlattices light emitting devices (LEDs). Each SiO₂ layer of the superlattices was prepared by using argon ion beam assisted sputtering (IBAS). Transmission electron microscopy revealed that the treatment of Ar ion beams on the SiO₂ layers did not affect the size or distribution of the Si nanocrystals in the SRO layers, but enhanced the thin-film quality of the SiO₂ and formed a clear SiO₂/SRO interface. The refractive index of SiO₂ was increased by IBAS because of an increase in the density of SiO₂. The EL efficiency was doubled for the IBAS device compared with that of a reference device. According to the retention property, the enhanced EL intensity of the IBAS device was ascribed to lower the charge loss rate through enhancing injection barrier of SiO₂. The mechanism of the EL enhancement of the IBAS LED was discussed.

Original language	English
Pages (from-to)	59-62
Number of pages	4
Journal	Vacuum
Volume	126
DOIs	https://doi.org/10.1016/j.vacuum.2016.01.020
Publication status	Published - 2016 Apr 1

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2016.01.020

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title = "Effect of SiO2 layers on electroluminescence from Si nanocrystal/SiO2 superlattices prepared using argon ion beam assisted sputtering",

abstract = "This study investigated the electroluminescence (EL) properties of Si-rich oxide (SRO)/SiO2 superlattices light emitting devices (LEDs). Each SiO2 layer of the superlattices was prepared by using argon ion beam assisted sputtering (IBAS). Transmission electron microscopy revealed that the treatment of Ar ion beams on the SiO2 layers did not affect the size or distribution of the Si nanocrystals in the SRO layers, but enhanced the thin-film quality of the SiO2 and formed a clear SiO2/SRO interface. The refractive index of SiO2 was increased by IBAS because of an increase in the density of SiO2. The EL efficiency was doubled for the IBAS device compared with that of a reference device. According to the retention property, the enhanced EL intensity of the IBAS device was ascribed to lower the charge loss rate through enhancing injection barrier of SiO2. The mechanism of the EL enhancement of the IBAS LED was discussed.",

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T1 - Effect of SiO2 layers on electroluminescence from Si nanocrystal/SiO2 superlattices prepared using argon ion beam assisted sputtering

AU - Fu, Sheng Wen

AU - Chen, Hui Ju

AU - Wu, Hsuan Ta

AU - Shih, Chuan-Feng

PY - 2016/4/1

Y1 - 2016/4/1

N2 - This study investigated the electroluminescence (EL) properties of Si-rich oxide (SRO)/SiO2 superlattices light emitting devices (LEDs). Each SiO2 layer of the superlattices was prepared by using argon ion beam assisted sputtering (IBAS). Transmission electron microscopy revealed that the treatment of Ar ion beams on the SiO2 layers did not affect the size or distribution of the Si nanocrystals in the SRO layers, but enhanced the thin-film quality of the SiO2 and formed a clear SiO2/SRO interface. The refractive index of SiO2 was increased by IBAS because of an increase in the density of SiO2. The EL efficiency was doubled for the IBAS device compared with that of a reference device. According to the retention property, the enhanced EL intensity of the IBAS device was ascribed to lower the charge loss rate through enhancing injection barrier of SiO2. The mechanism of the EL enhancement of the IBAS LED was discussed.

AB - This study investigated the electroluminescence (EL) properties of Si-rich oxide (SRO)/SiO2 superlattices light emitting devices (LEDs). Each SiO2 layer of the superlattices was prepared by using argon ion beam assisted sputtering (IBAS). Transmission electron microscopy revealed that the treatment of Ar ion beams on the SiO2 layers did not affect the size or distribution of the Si nanocrystals in the SRO layers, but enhanced the thin-film quality of the SiO2 and formed a clear SiO2/SRO interface. The refractive index of SiO2 was increased by IBAS because of an increase in the density of SiO2. The EL efficiency was doubled for the IBAS device compared with that of a reference device. According to the retention property, the enhanced EL intensity of the IBAS device was ascribed to lower the charge loss rate through enhancing injection barrier of SiO2. The mechanism of the EL enhancement of the IBAS LED was discussed.

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JO - Vacuum

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Effect of SiO₂ layers on electroluminescence from Si nanocrystal/SiO₂ superlattices prepared using argon ion beam assisted sputtering

Abstract

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