Effect of SnS buffer layer on solution process prepared Cu2ZnSnS4 solar cells

S. H. Wu, Q. Z. Guan, K. T. Huang, C. F. Shih, Y. Y. Wang

Research output: Contribution to journalArticlepeer-review


The effects of SnS buffer layers on the interfacial morphology, electrical model, and photovoltaic properties of solution-prepared CZTS devices were examined. Two SnS buffer layers were prepared and compared. The CZTS device that was fabricated on the as-coated SnS had many interfacial voids. By contrast, the annealed SnS layer markedly improved the CZTS quality by eliminating the voids at the CZTS-MoS2 interface. An additional capacitance-resistance circuit in parallel that was responsible for the interfacial defects was required to fit the admittance spectrum of the CZTS device prepared on the as-coated SnS. The efficiency of the CZTS solar cell prepared on the annealed SnS was as high as 8.8%, open-circuit voltage was 570 mV, short-circuit current was 24.08 mA/cm2, and fill factor was 64.5%. The open-circuit voltages and fill factor increased 43% and 72%, respectively, when the interlayer changed from the as-coated SnS to the annealed SnS.

Original languageEnglish
Pages (from-to)147-151
Number of pages5
JournalChalcogenide Letters
Issue number4
Publication statusPublished - 2017 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Physics and Astronomy(all)


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