TY - JOUR
T1 - Effect of SnS buffer layer on solution process prepared Cu2ZnSnS4 solar cells
AU - Wu, S. H.
AU - Guan, Q. Z.
AU - Huang, K. T.
AU - Shih, C. F.
AU - Wang, Y. Y.
N1 - Funding Information:
The authors thank the Ministry of Science and Technology, Taiwan, for financially supporting this study under contract no. 105-2221-E-006-220
PY - 2017/4
Y1 - 2017/4
N2 - The effects of SnS buffer layers on the interfacial morphology, electrical model, and photovoltaic properties of solution-prepared CZTS devices were examined. Two SnS buffer layers were prepared and compared. The CZTS device that was fabricated on the as-coated SnS had many interfacial voids. By contrast, the annealed SnS layer markedly improved the CZTS quality by eliminating the voids at the CZTS-MoS2 interface. An additional capacitance-resistance circuit in parallel that was responsible for the interfacial defects was required to fit the admittance spectrum of the CZTS device prepared on the as-coated SnS. The efficiency of the CZTS solar cell prepared on the annealed SnS was as high as 8.8%, open-circuit voltage was 570 mV, short-circuit current was 24.08 mA/cm2, and fill factor was 64.5%. The open-circuit voltages and fill factor increased 43% and 72%, respectively, when the interlayer changed from the as-coated SnS to the annealed SnS.
AB - The effects of SnS buffer layers on the interfacial morphology, electrical model, and photovoltaic properties of solution-prepared CZTS devices were examined. Two SnS buffer layers were prepared and compared. The CZTS device that was fabricated on the as-coated SnS had many interfacial voids. By contrast, the annealed SnS layer markedly improved the CZTS quality by eliminating the voids at the CZTS-MoS2 interface. An additional capacitance-resistance circuit in parallel that was responsible for the interfacial defects was required to fit the admittance spectrum of the CZTS device prepared on the as-coated SnS. The efficiency of the CZTS solar cell prepared on the annealed SnS was as high as 8.8%, open-circuit voltage was 570 mV, short-circuit current was 24.08 mA/cm2, and fill factor was 64.5%. The open-circuit voltages and fill factor increased 43% and 72%, respectively, when the interlayer changed from the as-coated SnS to the annealed SnS.
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M3 - Article
AN - SCOPUS:85019580248
VL - 14
SP - 147
EP - 151
JO - Chalcogenide Letters
JF - Chalcogenide Letters
SN - 1584-8663
IS - 4
ER -
