Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene

Guangyu Xu, Carlos M. Torres, Yuegang Zhang, Fei Liu, Emil B. Song, Minsheng Wang, Yi Zhou, Caifu Zeng, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

74 Citations (Scopus)


Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise ratios of unsuspended graphene devices. Here we present the four-probe low-frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed.

Original languageEnglish
Pages (from-to)3312-3317
Number of pages6
JournalNano letters
Issue number9
Publication statusPublished - 2010 Sep 8

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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