Effect of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells

Feng Hao Hsu, Na Fu Wang, Yu Zen Tsai, Ming Hao Chien, Mau Phon Houng

Research output: Contribution to journalArticle

Abstract

This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (Dit), resulting in the lowering of open circuit voltage (Voc) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest Dit of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 % [short circuit current density (Jsc): 18.06 mA cm−2, Voc: 390 mV, FF: 61.1 %, series resistance (Rs): 4.3 Ωcm2 and shunt resistance (Rsh): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C (Jsc: +0.07 %/°C, Voc: −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the Dit of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient.

Original languageEnglish
Pages (from-to)755-761
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number2
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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