Effect of substrate orientation on arsenic precipitation in low-temperature-grown GaAs

W. N. Lee; Y. F. Chen; J. H. Huang; X. J. Guo; C. T. Kuo

doi:10.1143/JJAP.44.6399

Effect of substrate orientation on arsenic precipitation in low-temperature-grown GaAs

W. N. Lee, Y. F. Chen, J. H. Huang, X. J. Guo, C. T. Kuo

Department of Physics

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Abstract

Arsenic precipitation in "superlattice" structures of alternately undoped and [Si] = 3 × 10¹⁸cm^--doped GaAs grown at 250°C on (100), (311)A, and (311)B GaAs substrates has been studied using transmission electron microscopy. It is found that upon postgrowth annealing at 800°C, As precipitates are nearly confined in the Si-doped regions, forming two-dimensional cluster arrays located approximately at the center of each Si-doped layer. The results also show that the As precipitates in the (311)B substrate are slightly denser and larger than those in the (311)A substrate and both are markedly denser and larger than those in the (100) substrate. This can be attributed to the varying excess arsenic incorporations in differently orientated substrates.

Original language	English
Pages (from-to)	6399-6402
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.44.6399
Publication status	Published - 2005 Sept 8

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Effect of substrate orientation on arsenic precipitation in low-temperature-grown GaAs",

abstract = "Arsenic precipitation in {"}superlattice{"} structures of alternately undoped and [Si] = 3 × 1018cm--doped GaAs grown at 250°C on (100), (311)A, and (311)B GaAs substrates has been studied using transmission electron microscopy. It is found that upon postgrowth annealing at 800°C, As precipitates are nearly confined in the Si-doped regions, forming two-dimensional cluster arrays located approximately at the center of each Si-doped layer. The results also show that the As precipitates in the (311)B substrate are slightly denser and larger than those in the (311)A substrate and both are markedly denser and larger than those in the (100) substrate. This can be attributed to the varying excess arsenic incorporations in differently orientated substrates.",

author = "Lee, {W. N.} and Chen, {Y. F.} and Huang, {J. H.} and Guo, {X. J.} and Kuo, {C. T.}",

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T1 - Effect of substrate orientation on arsenic precipitation in low-temperature-grown GaAs

AU - Lee, W. N.

AU - Chen, Y. F.

AU - Huang, J. H.

AU - Guo, X. J.

AU - Kuo, C. T.

PY - 2005/9/8

Y1 - 2005/9/8

N2 - Arsenic precipitation in "superlattice" structures of alternately undoped and [Si] = 3 × 1018cm--doped GaAs grown at 250°C on (100), (311)A, and (311)B GaAs substrates has been studied using transmission electron microscopy. It is found that upon postgrowth annealing at 800°C, As precipitates are nearly confined in the Si-doped regions, forming two-dimensional cluster arrays located approximately at the center of each Si-doped layer. The results also show that the As precipitates in the (311)B substrate are slightly denser and larger than those in the (311)A substrate and both are markedly denser and larger than those in the (100) substrate. This can be attributed to the varying excess arsenic incorporations in differently orientated substrates.

AB - Arsenic precipitation in "superlattice" structures of alternately undoped and [Si] = 3 × 1018cm--doped GaAs grown at 250°C on (100), (311)A, and (311)B GaAs substrates has been studied using transmission electron microscopy. It is found that upon postgrowth annealing at 800°C, As precipitates are nearly confined in the Si-doped regions, forming two-dimensional cluster arrays located approximately at the center of each Si-doped layer. The results also show that the As precipitates in the (311)B substrate are slightly denser and larger than those in the (311)A substrate and both are markedly denser and larger than those in the (100) substrate. This can be attributed to the varying excess arsenic incorporations in differently orientated substrates.

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JO - Japanese Journal of Applied Physics

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Effect of substrate orientation on arsenic precipitation in low-temperature-grown GaAs

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