The variations in the crystallization and luminescence characteristics of ZnGa2O4 phosphor screens deposited on various substrates were investigated. The ZnGa2O4 phosphor deposited on Corning glass, indium tin oxide glass and Si substrates was polycrystalline. However, when a ZnO buffer layer was prepared, it was amorphous; it was polycrystalline after annealing at a temperature higher than 300°C. The optimal cathodoluminescence was caused by the low backscattering of electrons, a large emission area, and the specific crystallization of the ZnGa 2O4 phosphor grown on the ITO glass substrate. When a ZnO buffer layer was prepared, small ZnGa2O4 grains were grown; consequently, the emission area and CL intensity increased. Resistivity measurement revealed that the conductivity and cathodoluminescence are improved by thermal annealing.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||7 A|
|Publication status||Published - 2007 Jul 4|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)