Effect of substrate temperature on the properties of Ti-doped ZnO films by simultaneous rf and dc magnetron sputtering

Su Shia Lin, Jow-Lay Huang, Ding Fwu Lii

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

The Ti-doped ZnO (ZnO:Ti) films were prepared by simultaneous radio frequency (rf) magnetron sputtering of ZnO and dc magnetron sputtering of Ti. The Ti oxides increased with the decrease in substrate temperature. Therefore, by decreasing the substrate temperature, X-ray peaks shifted towards a lower diffraction angle. When the substrate temperature increased from 50 to 150°C, the crystallinity increased obviously, but it decreased slightly at 200°C. The morphologies of films were significantly affected by the substrate temperature. The electrons of ZnO:Ti films may be originated from the oxygen vacancies and Ti donors. The mean free path of carriers were much shorter, therefore grain boundary scattering could be ruled out. The variation in mobility could be due to the ionized impurity scattering and surface roughness. The resistivity of ZnO:Ti film at 100°C has a minimum of 9.69 × 10-3 Ωcm, which is mainly due to the higher product of carrier concentration and mobility. At various substrate temperatures, the visible transmission of ZnO:Ti films was high.

Original languageEnglish
Pages (from-to)22-30
Number of pages9
JournalMaterials Chemistry and Physics
Volume90
Issue number1
DOIs
Publication statusPublished - 2005 Mar 15

Fingerprint

Magnetron sputtering
radio frequencies
magnetron sputtering
Substrates
Temperature
temperature
Scattering
Carrier mobility
Oxygen vacancies
scattering
mean free path
Oxides
Carrier concentration
crystallinity
surface roughness
Grain boundaries
roughness
grain boundaries
Diffraction
Surface roughness

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "The Ti-doped ZnO (ZnO:Ti) films were prepared by simultaneous radio frequency (rf) magnetron sputtering of ZnO and dc magnetron sputtering of Ti. The Ti oxides increased with the decrease in substrate temperature. Therefore, by decreasing the substrate temperature, X-ray peaks shifted towards a lower diffraction angle. When the substrate temperature increased from 50 to 150°C, the crystallinity increased obviously, but it decreased slightly at 200°C. The morphologies of films were significantly affected by the substrate temperature. The electrons of ZnO:Ti films may be originated from the oxygen vacancies and Ti donors. The mean free path of carriers were much shorter, therefore grain boundary scattering could be ruled out. The variation in mobility could be due to the ionized impurity scattering and surface roughness. The resistivity of ZnO:Ti film at 100°C has a minimum of 9.69 × 10-3 Ωcm, which is mainly due to the higher product of carrier concentration and mobility. At various substrate temperatures, the visible transmission of ZnO:Ti films was high.",
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Effect of substrate temperature on the properties of Ti-doped ZnO films by simultaneous rf and dc magnetron sputtering. / Lin, Su Shia; Huang, Jow-Lay; Lii, Ding Fwu.

In: Materials Chemistry and Physics, Vol. 90, No. 1, 15.03.2005, p. 22-30.

Research output: Contribution to journalArticle

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AB - The Ti-doped ZnO (ZnO:Ti) films were prepared by simultaneous radio frequency (rf) magnetron sputtering of ZnO and dc magnetron sputtering of Ti. The Ti oxides increased with the decrease in substrate temperature. Therefore, by decreasing the substrate temperature, X-ray peaks shifted towards a lower diffraction angle. When the substrate temperature increased from 50 to 150°C, the crystallinity increased obviously, but it decreased slightly at 200°C. The morphologies of films were significantly affected by the substrate temperature. The electrons of ZnO:Ti films may be originated from the oxygen vacancies and Ti donors. The mean free path of carriers were much shorter, therefore grain boundary scattering could be ruled out. The variation in mobility could be due to the ionized impurity scattering and surface roughness. The resistivity of ZnO:Ti film at 100°C has a minimum of 9.69 × 10-3 Ωcm, which is mainly due to the higher product of carrier concentration and mobility. At various substrate temperatures, the visible transmission of ZnO:Ti films was high.

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