Effect of surface electronic states of p-Type GaN on the blue-light-emitting diodes

C. F. Shih, N. C. Chen, P. H. Chang, K. S. Liu

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8 Citations (Scopus)

Abstract

The surface electronic states of p-type GaN and its effect on the light-emitting diodes (LEDs) containing such p-GaN layers are studied. The surface band bending of p-GaN layers prepared from different growth conditions are determined by ultraviolet photoemission spectroscopy and X-ray photoemission spectroscopy. By either way, it is found that the surface band bending depends on the growth conditions and is reduced by increasing Mg concentration, growth temperature, and N2-rich ambient. A further reduction in band bending is found with a postannealing at 750°C in N2, resulting in a similar reduction of the operation forward voltage of the LED containing such a p-GaN layer. The mechanism involved is discussed.

Original languageEnglish
Pages (from-to)G816-G818
JournalJournal of the Electrochemical Society
Volume152
Issue number11
DOIs
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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