Effect of surface free energy in gate dielectric in pentacene thin-film transistors

Wei Yang Chou, Chia Wei Kuo, Horng Long Cheng, Yi Ren Chen, Fu Ching Tang, Feng Yu Yang, Dun Yin Shu, Chi Chang Liao

Research output: Contribution to journalArticle

98 Citations (Scopus)

Abstract

The surface free energy of a dielectric has a strong influence on the performance of pentacene thin-film transistors. Research shows that by matching surface free energy in the interface of the dielectric and the orthorhombic thin-film phase of pentacene film, the field-effect mobility of transistors is enhanced reaching above 2.0 cm2/V s. The authors suggested that a more complete first monolayer of pentacene was formed upon the gate dielectric surface with almost identical surface free energy, benefiting carrier transportation. The research also discusses the mechanism of surface free energy effects on the crystalline size and structural disorder in pentacene film.

Original languageEnglish
Article number112126
JournalApplied Physics Letters
Volume89
Issue number11
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Effect of surface free energy in gate dielectric in pentacene thin-film transistors'. Together they form a unique fingerprint.

Cite this