TY - JOUR
T1 - Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates
AU - Uang, Kai Ming
AU - Wang, Shui Jinn
AU - Chen, Shiue Lung
AU - Yang, Yu Cheng
AU - Chen, Tron Min
AU - Liou, Bor Wen
PY - 2006/4/25
Y1 - 2006/4/25
N2 - Large-area (0.6 × 0.6 and 1 × 1 mm2) highly-efficient GaN-based light-emitting diodes (LEDs) with a vertical-conducting structure (VM-LEDs), using a patterned laser lift-off technique and a Ni electroplating process as well as a surface treatment of the top n-GaN epilayer by plasma and chemical etching, were successfully fabricated and investigated. Compared to regular LEDs of the same size, both the forward voltage drop and the light output power (Lop) of the VM-LED were substantially improved. With inductively coupled plasma (ICP) etching followed by an additional KOH etching and an HF/HCl treatment on the n-GaN layer, an increase in Lop by 227% (195%) at 350 (800) mA has been achieved for the (1 × 1 mm2)-sized VM-LEDs.
AB - Large-area (0.6 × 0.6 and 1 × 1 mm2) highly-efficient GaN-based light-emitting diodes (LEDs) with a vertical-conducting structure (VM-LEDs), using a patterned laser lift-off technique and a Ni electroplating process as well as a surface treatment of the top n-GaN epilayer by plasma and chemical etching, were successfully fabricated and investigated. Compared to regular LEDs of the same size, both the forward voltage drop and the light output power (Lop) of the VM-LED were substantially improved. With inductively coupled plasma (ICP) etching followed by an additional KOH etching and an HF/HCl treatment on the n-GaN layer, an increase in Lop by 227% (195%) at 350 (800) mA has been achieved for the (1 × 1 mm2)-sized VM-LEDs.
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U2 - 10.1143/JJAP.45.3436
DO - 10.1143/JJAP.45.3436
M3 - Article
AN - SCOPUS:33646925865
VL - 45
SP - 3436
EP - 3441
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 B
ER -