Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates

Kai Ming Uang; Shui Jinn Wang; Shiue Lung Chen; Yu Cheng Yang; Tron Min Chen; Bor Wen Liou

doi:10.1143/JJAP.45.3436

Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates

Kai Ming Uang, Shui Jinn Wang, Shiue Lung Chen, Yu Cheng Yang, Tron Min Chen, Bor Wen Liou

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Large-area (0.6 × 0.6 and 1 × 1 mm²) highly-efficient GaN-based light-emitting diodes (LEDs) with a vertical-conducting structure (VM-LEDs), using a patterned laser lift-off technique and a Ni electroplating process as well as a surface treatment of the top n-GaN epilayer by plasma and chemical etching, were successfully fabricated and investigated. Compared to regular LEDs of the same size, both the forward voltage drop and the light output power (L_op) of the VM-LED were substantially improved. With inductively coupled plasma (ICP) etching followed by an additional KOH etching and an HF/HCl treatment on the n-GaN layer, an increase in L_op by 227% (195%) at 350 (800) mA has been achieved for the (1 × 1 mm²)-sized VM-LEDs.

Original language	English
Pages (from-to)	3436-3441
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3436
Publication status	Published - 2006 Apr 25

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Uang, K. M., Wang, S. J., Chen, S. L., Yang, Y. C., Chen, T. M., & Liou, B. W. (2006). Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 B), 3436-3441. https://doi.org/10.1143/JJAP.45.3436

Uang, Kai Ming ; Wang, Shui Jinn ; Chen, Shiue Lung ; Yang, Yu Cheng ; Chen, Tron Min ; Liou, Bor Wen. / Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 4 B. pp. 3436-3441.

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title = "Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates",

abstract = "Large-area (0.6 × 0.6 and 1 × 1 mm2) highly-efficient GaN-based light-emitting diodes (LEDs) with a vertical-conducting structure (VM-LEDs), using a patterned laser lift-off technique and a Ni electroplating process as well as a surface treatment of the top n-GaN epilayer by plasma and chemical etching, were successfully fabricated and investigated. Compared to regular LEDs of the same size, both the forward voltage drop and the light output power (Lop) of the VM-LED were substantially improved. With inductively coupled plasma (ICP) etching followed by an additional KOH etching and an HF/HCl treatment on the n-GaN layer, an increase in Lop by 227% (195%) at 350 (800) mA has been achieved for the (1 × 1 mm2)-sized VM-LEDs.",

author = "Uang, {Kai Ming} and Wang, {Shui Jinn} and Chen, {Shiue Lung} and Yang, {Yu Cheng} and Chen, {Tron Min} and Liou, {Bor Wen}",

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Uang, KM, Wang, SJ, Chen, SL, Yang, YC, Chen, TM & Liou, BW 2006, 'Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 4 B, pp. 3436-3441. https://doi.org/10.1143/JJAP.45.3436

Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates. / Uang, Kai Ming; Wang, Shui Jinn; Chen, Shiue Lung; Yang, Yu Cheng; Chen, Tron Min; Liou, Bor Wen.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3436-3441.

Research output: Contribution to journal › Article › peer-review

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AU - Liou, Bor Wen

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