Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates

Kai Ming Uang, Shui Jinn Wang, Shiue Lung Chen, Yu Cheng Yang, Tron Min Chen, Bor Wen Liou

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Large-area (0.6 × 0.6 and 1 × 1 mm2) highly-efficient GaN-based light-emitting diodes (LEDs) with a vertical-conducting structure (VM-LEDs), using a patterned laser lift-off technique and a Ni electroplating process as well as a surface treatment of the top n-GaN epilayer by plasma and chemical etching, were successfully fabricated and investigated. Compared to regular LEDs of the same size, both the forward voltage drop and the light output power (Lop) of the VM-LED were substantially improved. With inductively coupled plasma (ICP) etching followed by an additional KOH etching and an HF/HCl treatment on the n-GaN layer, an increase in Lop by 227% (195%) at 350 (800) mA has been achieved for the (1 × 1 mm2)-sized VM-LEDs.

Original languageEnglish
Pages (from-to)3436-3441
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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