Ta2N thin films deposited at different substrate temperatures onto silicon (001) substrates can produce amorphous and crystalline phase with different preferred orientations. Upon annealing at 500°C for 30min, these films exhibit crystalline phases with the strong preferred orientation from (101) for the film deposited at 500°C to (002) for the film deposited at higher temperatures. Subsequently, the viability of employing them as the diffusion barriers between copper and silicon is investigated by annealing in a vacuum chamber at 500, 600, 700, and 800°C for 30 min following sputtering, where the thicknesses of Cu and Ta2N are fixed at 150nm and 100nm, respectively. The results show that the chemical reactions of Ta2N with Cu and Si and the structural stability at high temperatures are dependent on the crystalliniry of Ta2N and the Ta2N phase with the highest (002) preferred orientation exhibits the highest structural stability. This suggests that the (002) orientation in the poly-Ta2N can prevent copper diffusion more effectively.
|Number of pages||6|
|Publication status||Published - 2003 Jan 1|
|Event||Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States|
Duration: 2003 Oct 12 → 2003 Oct 17
|Other||Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium|
|Period||03-10-12 → 03-10-17|
All Science Journal Classification (ASJC) codes