Effect of Ta2N crystallinity on diffusion barrier properties

Hung Chin Chung, Chuan Pu Liu

Research output: Contribution to conferencePaper

Abstract

Ta2N thin films deposited at different substrate temperatures onto silicon (001) substrates can produce amorphous and crystalline phase with different preferred orientations. Upon annealing at 500°C for 30min, these films exhibit crystalline phases with the strong preferred orientation from (101) for the film deposited at 500°C to (002) for the film deposited at higher temperatures. Subsequently, the viability of employing them as the diffusion barriers between copper and silicon is investigated by annealing in a vacuum chamber at 500, 600, 700, and 800°C for 30 min following sputtering, where the thicknesses of Cu and Ta2N are fixed at 150nm and 100nm, respectively. The results show that the chemical reactions of Ta2N with Cu and Si and the structural stability at high temperatures are dependent on the crystalliniry of Ta2N and the Ta2N phase with the highest (002) preferred orientation exhibits the highest structural stability. This suggests that the (002) orientation in the poly-Ta2N can prevent copper diffusion more effectively.

Original languageEnglish
Pages161-166
Number of pages6
Publication statusPublished - 2003 Jan 1
EventCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL
Period03-10-1203-10-17

Fingerprint

Diffusion barriers
Silicon
Crystal orientation
Copper
Annealing
Crystalline materials
Substrates
Temperature
Sputtering
Chemical reactions
Vacuum
Thin films

All Science Journal Classification (ASJC) codes

  • Electrochemistry

Cite this

Chung, H. C., & Liu, C. P. (2003). Effect of Ta2N crystallinity on diffusion barrier properties. 161-166. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.
Chung, Hung Chin ; Liu, Chuan Pu. / Effect of Ta2N crystallinity on diffusion barrier properties. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.6 p.
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Chung, HC & Liu, CP 2003, 'Effect of Ta2N crystallinity on diffusion barrier properties', Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States, 03-10-12 - 03-10-17 pp. 161-166.

Effect of Ta2N crystallinity on diffusion barrier properties. / Chung, Hung Chin; Liu, Chuan Pu.

2003. 161-166 Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.

Research output: Contribution to conferencePaper

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N2 - Ta2N thin films deposited at different substrate temperatures onto silicon (001) substrates can produce amorphous and crystalline phase with different preferred orientations. Upon annealing at 500°C for 30min, these films exhibit crystalline phases with the strong preferred orientation from (101) for the film deposited at 500°C to (002) for the film deposited at higher temperatures. Subsequently, the viability of employing them as the diffusion barriers between copper and silicon is investigated by annealing in a vacuum chamber at 500, 600, 700, and 800°C for 30 min following sputtering, where the thicknesses of Cu and Ta2N are fixed at 150nm and 100nm, respectively. The results show that the chemical reactions of Ta2N with Cu and Si and the structural stability at high temperatures are dependent on the crystalliniry of Ta2N and the Ta2N phase with the highest (002) preferred orientation exhibits the highest structural stability. This suggests that the (002) orientation in the poly-Ta2N can prevent copper diffusion more effectively.

AB - Ta2N thin films deposited at different substrate temperatures onto silicon (001) substrates can produce amorphous and crystalline phase with different preferred orientations. Upon annealing at 500°C for 30min, these films exhibit crystalline phases with the strong preferred orientation from (101) for the film deposited at 500°C to (002) for the film deposited at higher temperatures. Subsequently, the viability of employing them as the diffusion barriers between copper and silicon is investigated by annealing in a vacuum chamber at 500, 600, 700, and 800°C for 30 min following sputtering, where the thicknesses of Cu and Ta2N are fixed at 150nm and 100nm, respectively. The results show that the chemical reactions of Ta2N with Cu and Si and the structural stability at high temperatures are dependent on the crystalliniry of Ta2N and the Ta2N phase with the highest (002) preferred orientation exhibits the highest structural stability. This suggests that the (002) orientation in the poly-Ta2N can prevent copper diffusion more effectively.

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Chung HC, Liu CP. Effect of Ta2N crystallinity on diffusion barrier properties. 2003. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.