Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors

Yu Chih Huang, Po Yu Yang, Hau Yuan Huang, Shui Jinn Wang, Huang Chung Cheng

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The in?uence of the thermal annealing on the amorphous indium gallium zinc oxide (a-IGZO) thin-?lm transistors (TFTs) under different ambient gases has been systematically addressed. The chemical bonding states and transfer characteristics of a-IGZO TFTs show evident dependence on the annealing ambient gas. For the a-IGZO TFTs in the oxygen ambient annealing at 250 °C for 30 mins exhibited a maximum ?eld effect mobility (max μFE) of 9.36 cm 2/V ̇ s, on/off current ratio of 6.12 × 10 10, and a subthreshold slope (SS) of 0.21 V/decade. Respectively, the as-deposited ones without annealing possess a max μFE of 6.61 cm 2/V ̇ s, on/off current ratio of 4.58 × 10 8, and a SS of 0.46 V/decade. In contrast, the a-IGZO TFTs annealed at 250 °C for 30 mins in the nitrogen ambient would be degraded to have a max μ FE of 0.18 cm 2/V ̇ s, on/off current ratio of 2.22 × 10 4, and a SS of 7.37 V/decade, corresponding. It is attributed to the content of the oxygen vacancies, according the x-ray photoelectron spectroscopy (XPS) analyze of the three different samples.

Original languageEnglish
Pages (from-to)5625-5630
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number7
DOIs
Publication statusPublished - 2012 Jul 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors'. Together they form a unique fingerprint.

  • Cite this