Effect of the target shuttering on the characteristics of the Ta-Si-N thin films by reactive magnetron co-sputtering

Chen-Kuei Chung, T. S. Chen, A. Nautiyal, N. W. Chang, S. T. Hung

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The Ta-Si-N thin films were prepared using a reactive magnetron co-sputtering with and without an alternating target shutter control at different N2 flow ratios (FN2% = FN2/(FAr + FN2) × 100%) of 3-20%. The evolution of microstructure, composition, morphology, resistivity, and nanomechanical properties of Ta-Si-N films was characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrum (EDS), scanning electronic microscopy, four-point probe technique and nanoindentation, respectively. The broad XRD peaks of Ta-Si-N films with and without target shuttering at low 3-10 FN2% showed the microstructure was quasi-amorphous i.e. nanocrystalline grains embedded in an amorphous matrix. The quasi-amorphous Ta-Si-N without target shuttering was transformed into the polycrystalline phase at 20 FN2% while that with target shuttering still remained in quasi-amorphous microstructure due to the increased Si content. The resistivity of quasi-amorphous Ta-Si-N films with and without target shuttering at 3-10 FN2% ranged in 262-385 μΩ cm while that of Ta-Si-N films at 20 FN2% was much higher at 976-9925 μΩ cm. The hardness of quasi-amorphous Ta-Si-N films with and without target shuttering at 3-10 FN2% ranged from 14.3 to 18.5 GPa while that of polycrystalline Ta-Si-N film was about 10.3 GPa. Quasi-amorphous Ta-Si-N films had much lower resistivity, higher nanohardness and smooth morphology compared to the polycrystalline film.

Original languageEnglish
Pages (from-to)1071-1075
Number of pages5
JournalSurface and Coatings Technology
Volume204
Issue number6-7
DOIs
Publication statusPublished - 2009 Dec 25

Fingerprint

Sputtering
sputtering
Thin films
thin films
microstructure
Microstructure
electrical resistivity
Nanohardness
X ray diffraction
x rays
shutters
Nanoindentation
nanoindentation
diffraction
Energy dispersive spectroscopy
Microscopic examination
hardness
Hardness
microscopy
Scanning

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Chung, Chen-Kuei ; Chen, T. S. ; Nautiyal, A. ; Chang, N. W. ; Hung, S. T. / Effect of the target shuttering on the characteristics of the Ta-Si-N thin films by reactive magnetron co-sputtering. In: Surface and Coatings Technology. 2009 ; Vol. 204, No. 6-7. pp. 1071-1075.
@article{6b53f2afc0914079a89a8b7c80ac209a,
title = "Effect of the target shuttering on the characteristics of the Ta-Si-N thin films by reactive magnetron co-sputtering",
abstract = "The Ta-Si-N thin films were prepared using a reactive magnetron co-sputtering with and without an alternating target shutter control at different N2 flow ratios (FN2{\%} = FN2/(FAr + FN2) × 100{\%}) of 3-20{\%}. The evolution of microstructure, composition, morphology, resistivity, and nanomechanical properties of Ta-Si-N films was characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrum (EDS), scanning electronic microscopy, four-point probe technique and nanoindentation, respectively. The broad XRD peaks of Ta-Si-N films with and without target shuttering at low 3-10 FN2{\%} showed the microstructure was quasi-amorphous i.e. nanocrystalline grains embedded in an amorphous matrix. The quasi-amorphous Ta-Si-N without target shuttering was transformed into the polycrystalline phase at 20 FN2{\%} while that with target shuttering still remained in quasi-amorphous microstructure due to the increased Si content. The resistivity of quasi-amorphous Ta-Si-N films with and without target shuttering at 3-10 FN2{\%} ranged in 262-385 μΩ cm while that of Ta-Si-N films at 20 FN2{\%} was much higher at 976-9925 μΩ cm. The hardness of quasi-amorphous Ta-Si-N films with and without target shuttering at 3-10 FN2{\%} ranged from 14.3 to 18.5 GPa while that of polycrystalline Ta-Si-N film was about 10.3 GPa. Quasi-amorphous Ta-Si-N films had much lower resistivity, higher nanohardness and smooth morphology compared to the polycrystalline film.",
author = "Chen-Kuei Chung and Chen, {T. S.} and A. Nautiyal and Chang, {N. W.} and Hung, {S. T.}",
year = "2009",
month = "12",
day = "25",
doi = "10.1016/j.surfcoat.2009.06.031",
language = "English",
volume = "204",
pages = "1071--1075",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "6-7",

}

Effect of the target shuttering on the characteristics of the Ta-Si-N thin films by reactive magnetron co-sputtering. / Chung, Chen-Kuei; Chen, T. S.; Nautiyal, A.; Chang, N. W.; Hung, S. T.

In: Surface and Coatings Technology, Vol. 204, No. 6-7, 25.12.2009, p. 1071-1075.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of the target shuttering on the characteristics of the Ta-Si-N thin films by reactive magnetron co-sputtering

AU - Chung, Chen-Kuei

AU - Chen, T. S.

AU - Nautiyal, A.

AU - Chang, N. W.

AU - Hung, S. T.

PY - 2009/12/25

Y1 - 2009/12/25

N2 - The Ta-Si-N thin films were prepared using a reactive magnetron co-sputtering with and without an alternating target shutter control at different N2 flow ratios (FN2% = FN2/(FAr + FN2) × 100%) of 3-20%. The evolution of microstructure, composition, morphology, resistivity, and nanomechanical properties of Ta-Si-N films was characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrum (EDS), scanning electronic microscopy, four-point probe technique and nanoindentation, respectively. The broad XRD peaks of Ta-Si-N films with and without target shuttering at low 3-10 FN2% showed the microstructure was quasi-amorphous i.e. nanocrystalline grains embedded in an amorphous matrix. The quasi-amorphous Ta-Si-N without target shuttering was transformed into the polycrystalline phase at 20 FN2% while that with target shuttering still remained in quasi-amorphous microstructure due to the increased Si content. The resistivity of quasi-amorphous Ta-Si-N films with and without target shuttering at 3-10 FN2% ranged in 262-385 μΩ cm while that of Ta-Si-N films at 20 FN2% was much higher at 976-9925 μΩ cm. The hardness of quasi-amorphous Ta-Si-N films with and without target shuttering at 3-10 FN2% ranged from 14.3 to 18.5 GPa while that of polycrystalline Ta-Si-N film was about 10.3 GPa. Quasi-amorphous Ta-Si-N films had much lower resistivity, higher nanohardness and smooth morphology compared to the polycrystalline film.

AB - The Ta-Si-N thin films were prepared using a reactive magnetron co-sputtering with and without an alternating target shutter control at different N2 flow ratios (FN2% = FN2/(FAr + FN2) × 100%) of 3-20%. The evolution of microstructure, composition, morphology, resistivity, and nanomechanical properties of Ta-Si-N films was characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrum (EDS), scanning electronic microscopy, four-point probe technique and nanoindentation, respectively. The broad XRD peaks of Ta-Si-N films with and without target shuttering at low 3-10 FN2% showed the microstructure was quasi-amorphous i.e. nanocrystalline grains embedded in an amorphous matrix. The quasi-amorphous Ta-Si-N without target shuttering was transformed into the polycrystalline phase at 20 FN2% while that with target shuttering still remained in quasi-amorphous microstructure due to the increased Si content. The resistivity of quasi-amorphous Ta-Si-N films with and without target shuttering at 3-10 FN2% ranged in 262-385 μΩ cm while that of Ta-Si-N films at 20 FN2% was much higher at 976-9925 μΩ cm. The hardness of quasi-amorphous Ta-Si-N films with and without target shuttering at 3-10 FN2% ranged from 14.3 to 18.5 GPa while that of polycrystalline Ta-Si-N film was about 10.3 GPa. Quasi-amorphous Ta-Si-N films had much lower resistivity, higher nanohardness and smooth morphology compared to the polycrystalline film.

UR - http://www.scopus.com/inward/record.url?scp=71849110458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71849110458&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2009.06.031

DO - 10.1016/j.surfcoat.2009.06.031

M3 - Article

AN - SCOPUS:71849110458

VL - 204

SP - 1071

EP - 1075

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 6-7

ER -