Effect of thermal annealing on the GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer

Ming Lun Lee; T. S. Mue; J. K. Sheu; K. H. Chang; S. J. Tu; T. H. Hsueh

doi:10.1149/1.3489264

Effect of thermal annealing on the GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer

Ming Lun Lee, T. S. Mue, J. K. Sheu, K. H. Chang, S. J. Tu, T. H. Hsueh

Department of Photonics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this study, gallium nitride (GaN)-based metal-oxide-semiconductor diodes with a gallium oxide (GaO_x) gate layer formed by ac bias-assisted photoelectrochemical oxidation of n-type GaN in H₂O were demonstrated. A typical flatband voltage of 4.35 V was obtained by capacitance-voltage (C-V) measurement. The observed C-V curves shifted toward the negative voltage side when the GaO_x /n-GaN heterostructures were annealed in ambient oxygen (O₂). This result could be tentatively attributed to the fact that the negative effective charges existing in the GaO_x layer and/or in the n-GaN/ GaO_x interface could be reduced due to the ambient O₂ annealing process. A negative value of the effective charge density of ∼2.01× 10^-7 C/cm ^-2, which corresponds to an effective insulator charge number density of around 1.25× 10¹² cm^-2, was obtained.

Original language	English
Pages (from-to)	H1019-H1022
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	11
DOIs	https://doi.org/10.1149/1.3489264
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

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title = "Effect of thermal annealing on the GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer",

abstract = "In this study, gallium nitride (GaN)-based metal-oxide-semiconductor diodes with a gallium oxide (GaOx) gate layer formed by ac bias-assisted photoelectrochemical oxidation of n-type GaN in H2O were demonstrated. A typical flatband voltage of 4.35 V was obtained by capacitance-voltage (C-V) measurement. The observed C-V curves shifted toward the negative voltage side when the GaOx /n-GaN heterostructures were annealed in ambient oxygen (O2). This result could be tentatively attributed to the fact that the negative effective charges existing in the GaOx layer and/or in the n-GaN/ GaOx interface could be reduced due to the ambient O2 annealing process. A negative value of the effective charge density of ∼2.01× 10-7 C/cm -2, which corresponds to an effective insulator charge number density of around 1.25× 1012 cm-2, was obtained.",

author = "Lee, {Ming Lun} and Mue, {T. S.} and Sheu, {J. K.} and Chang, {K. H.} and Tu, {S. J.} and Hsueh, {T. H.}",

year = "2010",

doi = "10.1149/1.3489264",

language = "English",

volume = "157",

pages = "H1019--H1022",

journal = "Journal of the Electrochemical Society",

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TY - JOUR

T1 - Effect of thermal annealing on the GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer

AU - Lee, Ming Lun

AU - Mue, T. S.

AU - Sheu, J. K.

AU - Chang, K. H.

AU - Tu, S. J.

AU - Hsueh, T. H.

PY - 2010

Y1 - 2010

N2 - In this study, gallium nitride (GaN)-based metal-oxide-semiconductor diodes with a gallium oxide (GaOx) gate layer formed by ac bias-assisted photoelectrochemical oxidation of n-type GaN in H2O were demonstrated. A typical flatband voltage of 4.35 V was obtained by capacitance-voltage (C-V) measurement. The observed C-V curves shifted toward the negative voltage side when the GaOx /n-GaN heterostructures were annealed in ambient oxygen (O2). This result could be tentatively attributed to the fact that the negative effective charges existing in the GaOx layer and/or in the n-GaN/ GaOx interface could be reduced due to the ambient O2 annealing process. A negative value of the effective charge density of ∼2.01× 10-7 C/cm -2, which corresponds to an effective insulator charge number density of around 1.25× 1012 cm-2, was obtained.

AB - In this study, gallium nitride (GaN)-based metal-oxide-semiconductor diodes with a gallium oxide (GaOx) gate layer formed by ac bias-assisted photoelectrochemical oxidation of n-type GaN in H2O were demonstrated. A typical flatband voltage of 4.35 V was obtained by capacitance-voltage (C-V) measurement. The observed C-V curves shifted toward the negative voltage side when the GaOx /n-GaN heterostructures were annealed in ambient oxygen (O2). This result could be tentatively attributed to the fact that the negative effective charges existing in the GaOx layer and/or in the n-GaN/ GaOx interface could be reduced due to the ambient O2 annealing process. A negative value of the effective charge density of ∼2.01× 10-7 C/cm -2, which corresponds to an effective insulator charge number density of around 1.25× 1012 cm-2, was obtained.

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VL - 157

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 11

ER -

Effect of thermal annealing on the GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer

Abstract

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