Effect of thermal annealing on the photoluminescence of β-FeSi2 films on Si substrate

Kenji Yamaguchi; Kenichiro Shimura; Haruhiko Udono; Masato Sasase; Hiroyuki Yamamoto; Shin ichi Shamoto; Kiichi Hojou

doi:10.1016/j.tsf.2005.07.354

Effect of thermal annealing on the photoluminescence of β-FeSi₂ films on Si substrate

Kenji Yamaguchi, Kenichiro Shimura, Haruhiko Udono, Masato Sasase, Hiroyuki Yamamoto, Shin ichi Shamoto, Kiichi Hojou

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In order to improve the photoluminescence (PL) of semiconducting β-FeSi₂ films, as-grown films were thermally annealed under various conditions. The films were fabricated either by an ion beam sputter deposition (IBSD) or a molecular beam epitaxy (MBE) method. For both IBSD-grown and MBE-grown films, high temperature annealing in a flow of Ar gas or air led to drastic enhancement of PL intensity. Furthermore, PL characteristics were found to depend on the annealing atmosphere, where it was shown that air was more effective than Ar gas.

Original language	English
Pages (from-to)	367-370
Number of pages	4
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.354
Publication status	Published - 2006 Jun 5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.07.354

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abstract = "In order to improve the photoluminescence (PL) of semiconducting β-FeSi2 films, as-grown films were thermally annealed under various conditions. The films were fabricated either by an ion beam sputter deposition (IBSD) or a molecular beam epitaxy (MBE) method. For both IBSD-grown and MBE-grown films, high temperature annealing in a flow of Ar gas or air led to drastic enhancement of PL intensity. Furthermore, PL characteristics were found to depend on the annealing atmosphere, where it was shown that air was more effective than Ar gas.",

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AU - Yamaguchi, Kenji

AU - Shimura, Kenichiro

AU - Udono, Haruhiko

AU - Sasase, Masato

AU - Yamamoto, Hiroyuki

AU - Shamoto, Shin ichi

AU - Hojou, Kiichi

PY - 2006/6/5

Y1 - 2006/6/5

N2 - In order to improve the photoluminescence (PL) of semiconducting β-FeSi2 films, as-grown films were thermally annealed under various conditions. The films were fabricated either by an ion beam sputter deposition (IBSD) or a molecular beam epitaxy (MBE) method. For both IBSD-grown and MBE-grown films, high temperature annealing in a flow of Ar gas or air led to drastic enhancement of PL intensity. Furthermore, PL characteristics were found to depend on the annealing atmosphere, where it was shown that air was more effective than Ar gas.

AB - In order to improve the photoluminescence (PL) of semiconducting β-FeSi2 films, as-grown films were thermally annealed under various conditions. The films were fabricated either by an ion beam sputter deposition (IBSD) or a molecular beam epitaxy (MBE) method. For both IBSD-grown and MBE-grown films, high temperature annealing in a flow of Ar gas or air led to drastic enhancement of PL intensity. Furthermore, PL characteristics were found to depend on the annealing atmosphere, where it was shown that air was more effective than Ar gas.

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Effect of thermal annealing on the photoluminescence of β-FeSi₂ films on Si substrate

Abstract

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