Effect of under-layer treatment of Ta/TaN barrier film on corrosion between Cu seed and Ta in chemical-mechanical-polishing slurry

Wen-Shi Lee, Chi Cheng Hung, Yu Sheng Wang, Shih Chieh Chang, Ying Lang Wang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Tantalum/tantalum nitride (Ta/TaN x) composite film is widely used as a copper (Cu) diffusion barrier layer. In order to reduce via-resistance, an additional argon (Ar) re-sputtering process is used to thin the barrier thickness at the feature bottom. In this study, the effect of Ar re-sputtering of the under-layer of TaN x barrier films on the corrosion between Cu seeds and upper Ta films in chemicalmechanical- polishing (CMP) slurries was investigated. The results show that Ar re-sputtering of the under-layer of the TaN x barrier has a strong influence on the corrosion of Cu seeds and Ta films. The equivalent circuit, simulated using data from electrochemical analysis, reveals changes in resistance and capacitance elements of the Cu-Ta electrochemical system, proving that the phase transformation of upper Ta films under different TaN x conditions leads to different degrees corrosion of Cu seeds and the Ta films.

Original languageEnglish
Pages (from-to)4196-4203
Number of pages8
JournalJournal of Nanoscience and Nanotechnology
Volume10
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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