Effect of underlying silicon film on the evolution of microstructure and hardness of the high-temperature annealed carbon film on Si substrate

C. K. Chung; B. H. Wu

doi:10.1016/j.matlet.2009.08.021

Effect of underlying silicon film on the evolution of microstructure and hardness of the high-temperature annealed carbon film on Si substrate

C. K. Chung, B. H. Wu

Research output: Contribution to journal › Article › peer-review

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Abstract

Effects of an amorphous silicon underlayer on the evolution of microstructure and hardness of an amorphous carbon film annealed at 900 °C for 0.5-1.5 h were investigated. The two-layer carbon/silicon film after annealing resulted in higher sp²/sp³ bonding ratio but lower hardness reduction compared to the single carbon film at the same total film thickness. The improved hardness reduction of the high-temperature annealed carbon film is attributed to the formation of polycrystals of the amorphous silicon together with the residual compressive stress of the two-layer C/Si films.

Original language	English
Pages (from-to)	2369-2372
Number of pages	4
Journal	Materials Letters
Volume	63
Issue number	27
DOIs	https://doi.org/10.1016/j.matlet.2009.08.021
Publication status	Published - 2009 Nov 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2009.08.021

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title = "Effect of underlying silicon film on the evolution of microstructure and hardness of the high-temperature annealed carbon film on Si substrate",

abstract = "Effects of an amorphous silicon underlayer on the evolution of microstructure and hardness of an amorphous carbon film annealed at 900 °C for 0.5-1.5 h were investigated. The two-layer carbon/silicon film after annealing resulted in higher sp2/sp3 bonding ratio but lower hardness reduction compared to the single carbon film at the same total film thickness. The improved hardness reduction of the high-temperature annealed carbon film is attributed to the formation of polycrystals of the amorphous silicon together with the residual compressive stress of the two-layer C/Si films.",

author = "Chung, {C. K.} and Wu, {B. H.}",

note = "Funding Information: This work is partially sponsored by the National Science Council under grant No. NSC 96-2628-E-006-080-MY3 . The authors also would like to thank the Center for Micro/Nano Science and Technology (CMNST) and the Center for Precious Instruments in National Cheng Kung University, Tainan, Taiwan, for the access of process and analysis equipments and technical support. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

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day = "15",

doi = "10.1016/j.matlet.2009.08.021",

language = "English",

volume = "63",

pages = "2369--2372",

journal = "Materials Letters",

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T1 - Effect of underlying silicon film on the evolution of microstructure and hardness of the high-temperature annealed carbon film on Si substrate

AU - Chung, C. K.

AU - Wu, B. H.

N1 - Funding Information: This work is partially sponsored by the National Science Council under grant No. NSC 96-2628-E-006-080-MY3 . The authors also would like to thank the Center for Micro/Nano Science and Technology (CMNST) and the Center for Precious Instruments in National Cheng Kung University, Tainan, Taiwan, for the access of process and analysis equipments and technical support. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009/11/15

Y1 - 2009/11/15

N2 - Effects of an amorphous silicon underlayer on the evolution of microstructure and hardness of an amorphous carbon film annealed at 900 °C for 0.5-1.5 h were investigated. The two-layer carbon/silicon film after annealing resulted in higher sp2/sp3 bonding ratio but lower hardness reduction compared to the single carbon film at the same total film thickness. The improved hardness reduction of the high-temperature annealed carbon film is attributed to the formation of polycrystals of the amorphous silicon together with the residual compressive stress of the two-layer C/Si films.

AB - Effects of an amorphous silicon underlayer on the evolution of microstructure and hardness of an amorphous carbon film annealed at 900 °C for 0.5-1.5 h were investigated. The two-layer carbon/silicon film after annealing resulted in higher sp2/sp3 bonding ratio but lower hardness reduction compared to the single carbon film at the same total film thickness. The improved hardness reduction of the high-temperature annealed carbon film is attributed to the formation of polycrystals of the amorphous silicon together with the residual compressive stress of the two-layer C/Si films.

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JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

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Effect of underlying silicon film on the evolution of microstructure and hardness of the high-temperature annealed carbon film on Si substrate

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