Abstract
Effects of an amorphous silicon underlayer on the evolution of microstructure and hardness of an amorphous carbon film annealed at 900 °C for 0.5-1.5 h were investigated. The two-layer carbon/silicon film after annealing resulted in higher sp2/sp3 bonding ratio but lower hardness reduction compared to the single carbon film at the same total film thickness. The improved hardness reduction of the high-temperature annealed carbon film is attributed to the formation of polycrystals of the amorphous silicon together with the residual compressive stress of the two-layer C/Si films.
| Original language | English |
|---|---|
| Pages (from-to) | 2369-2372 |
| Number of pages | 4 |
| Journal | Materials Letters |
| Volume | 63 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - 2009 Nov 15 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Effect of underlying silicon film on the evolution of microstructure and hardness of the high-temperature annealed carbon film on Si substrate. / Chung, C. K.; Wu, B. H.
In: Materials Letters, Vol. 63, No. 27, 15.11.2009, p. 2369-2372.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of underlying silicon film on the evolution of microstructure and hardness of the high-temperature annealed carbon film on Si substrate
AU - Chung, C. K.
AU - Wu, B. H.
PY - 2009/11/15
Y1 - 2009/11/15
N2 - Effects of an amorphous silicon underlayer on the evolution of microstructure and hardness of an amorphous carbon film annealed at 900 °C for 0.5-1.5 h were investigated. The two-layer carbon/silicon film after annealing resulted in higher sp2/sp3 bonding ratio but lower hardness reduction compared to the single carbon film at the same total film thickness. The improved hardness reduction of the high-temperature annealed carbon film is attributed to the formation of polycrystals of the amorphous silicon together with the residual compressive stress of the two-layer C/Si films.
AB - Effects of an amorphous silicon underlayer on the evolution of microstructure and hardness of an amorphous carbon film annealed at 900 °C for 0.5-1.5 h were investigated. The two-layer carbon/silicon film after annealing resulted in higher sp2/sp3 bonding ratio but lower hardness reduction compared to the single carbon film at the same total film thickness. The improved hardness reduction of the high-temperature annealed carbon film is attributed to the formation of polycrystals of the amorphous silicon together with the residual compressive stress of the two-layer C/Si films.
UR - http://www.scopus.com/inward/record.url?scp=69849090788&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=69849090788&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2009.08.021
DO - 10.1016/j.matlet.2009.08.021
M3 - Article
AN - SCOPUS:69849090788
VL - 63
SP - 2369
EP - 2372
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
IS - 27
ER -