Effect of underlying silicon layer on microstructure and photoluminescence of rapid-thermal-annealed carbon and C/Si nanofilms

Chen-Kuei Chung, C. W. Lai, B. H. Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A composite material for broad photoluminescence (PL) from asymmetry to more symmetry-like was proposed by the formation of Si nanocrystals (nc-Si), SiC nanoparticles (np-SiC) and sp2 carbon cluster which were made from the two-layer C/Si on Si(1 0 0) using rapid-thermal-annealing at 750 C for 1 min. The effect of underlying Si layer thickness on the microstructure and broad PL of the annealed carbon and two-layer C/Si films has been investigated. Fourier-transform-infrared-absorption spectra indicated that very weak Si-C bonding peak was observed for the annealed single-C film and the enhanced intensity occurred at two-layer C/Si films with underlying thickness of 10-25 nm. Compared to the single-C film, the two-layer C/Si film was beneficial for formation of SiC which increased with Si thickness. A more symmetry-like broad PL band around 400-700 nm was observed at the annealed C/Si films with higher Si thickness of 25 nm while the annealed C film has weak and narrow band. Also, the enhanced symmetry-like PL band was attributed to more amount of np-SiC formation at the bottom of C/Si film together with reduced C thickness which can be potentially applied into white light emission material. The detailed mechanism of broad PL was proposed in terms of microstructure evolution.

Original languageEnglish
Pages (from-to)31-36
Number of pages6
JournalJournal of Alloys and Compounds
Volume571
DOIs
Publication statusPublished - 2013 Sep 15

Fingerprint

Silicon
Photoluminescence
Carbon
Microstructure
Carbon clusters
Hot Temperature
Rapid thermal annealing
Light emission
Infrared absorption
Nanocrystals
Absorption spectra
Fourier transforms
Nanoparticles
Composite materials

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Effect of underlying silicon layer on microstructure and photoluminescence of rapid-thermal-annealed carbon and C/Si nanofilms",
abstract = "A composite material for broad photoluminescence (PL) from asymmetry to more symmetry-like was proposed by the formation of Si nanocrystals (nc-Si), SiC nanoparticles (np-SiC) and sp2 carbon cluster which were made from the two-layer C/Si on Si(1 0 0) using rapid-thermal-annealing at 750 C for 1 min. The effect of underlying Si layer thickness on the microstructure and broad PL of the annealed carbon and two-layer C/Si films has been investigated. Fourier-transform-infrared-absorption spectra indicated that very weak Si-C bonding peak was observed for the annealed single-C film and the enhanced intensity occurred at two-layer C/Si films with underlying thickness of 10-25 nm. Compared to the single-C film, the two-layer C/Si film was beneficial for formation of SiC which increased with Si thickness. A more symmetry-like broad PL band around 400-700 nm was observed at the annealed C/Si films with higher Si thickness of 25 nm while the annealed C film has weak and narrow band. Also, the enhanced symmetry-like PL band was attributed to more amount of np-SiC formation at the bottom of C/Si film together with reduced C thickness which can be potentially applied into white light emission material. The detailed mechanism of broad PL was proposed in terms of microstructure evolution.",
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Effect of underlying silicon layer on microstructure and photoluminescence of rapid-thermal-annealed carbon and C/Si nanofilms. / Chung, Chen-Kuei; Lai, C. W.; Wu, B. H.

In: Journal of Alloys and Compounds, Vol. 571, 15.09.2013, p. 31-36.

Research output: Contribution to journalArticle

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PY - 2013/9/15

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AB - A composite material for broad photoluminescence (PL) from asymmetry to more symmetry-like was proposed by the formation of Si nanocrystals (nc-Si), SiC nanoparticles (np-SiC) and sp2 carbon cluster which were made from the two-layer C/Si on Si(1 0 0) using rapid-thermal-annealing at 750 C for 1 min. The effect of underlying Si layer thickness on the microstructure and broad PL of the annealed carbon and two-layer C/Si films has been investigated. Fourier-transform-infrared-absorption spectra indicated that very weak Si-C bonding peak was observed for the annealed single-C film and the enhanced intensity occurred at two-layer C/Si films with underlying thickness of 10-25 nm. Compared to the single-C film, the two-layer C/Si film was beneficial for formation of SiC which increased with Si thickness. A more symmetry-like broad PL band around 400-700 nm was observed at the annealed C/Si films with higher Si thickness of 25 nm while the annealed C film has weak and narrow band. Also, the enhanced symmetry-like PL band was attributed to more amount of np-SiC formation at the bottom of C/Si film together with reduced C thickness which can be potentially applied into white light emission material. The detailed mechanism of broad PL was proposed in terms of microstructure evolution.

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