Effect of UV-ozone treatment on the performance of ZnO TFTs fabricated by RF sputtering deposition technique

Jia Ling Wu, Han Yu Lin, Po Hung Kuo, Bo Yuan Su, Sheng Yuan Chu, Yu Cheng Chen, Ssu Yin Liu, Chia Chiang Chang, Chin Jyi Wu

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19 Citations (Scopus)

Abstract

In this paper, bottom-gate thin-film transistors (TFTs) with zinc oxide (ZnO) channels were grown on Si substrates with an SiO2 dielectric layer via the radio-frequency sputtering technique. The ZnO films were then subjected to 16 min of ultraviolet (UV)-ozone treatment, which resulted in fewer oxygen vacancies, enhanced crystallization, lower strain, lower surface roughness, and higher thin-film density, as well as improved surface energy and adhesion properties of the gallium zinc oxide source/drain electrodes. The UV-ozone 16-min ZnO active layer TFT with the preferable resistivity values by Hall measurement results. The optimal UV-ozone treatment time (16 min) led to the smallest full-width at half-maximum (0.4138 °), smallest strain (2.61× 10-3) , highest thin-film density (5.78 g/cm 3) , lowest surface roughness (1.75 nm), and largest surface energy (65.3 mJ/m2). The saturation mobility, subthreshold voltage, ON/OFF current ratio, and trap density of the ZnO TFTs with optimal UV-ozone treatment were 4.54 cm2 V-1S-1 , 0.28 V/decade, 2.02 × 107 , and 2.61 × 1011 eV-1 cm-2 , respectively, indicating the potential of this structure to be applied to large-area flat-panel displays.

Original languageEnglish
Article number6802463
Pages (from-to)1403-1409
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume61
Issue number5
DOIs
Publication statusPublished - 2014 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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