Effect of UV-ozone treatment on the performance of ZnO TFTs fabricated by RF sputtering deposition technique

Jia Ling Wu, Han Yu Lin, Po Hung Kuo, Bo Yuan Su, Sheng-Yuan Chu, Yu Cheng Chen, Ssu Yin Liu, Chia Chiang Chang, Chin Jyi Wu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


In this paper, bottom-gate thin-film transistors (TFTs) with zinc oxide (ZnO) channels were grown on Si substrates with an SiO2 dielectric layer via the radio-frequency sputtering technique. The ZnO films were then subjected to 16 min of ultraviolet (UV)-ozone treatment, which resulted in fewer oxygen vacancies, enhanced crystallization, lower strain, lower surface roughness, and higher thin-film density, as well as improved surface energy and adhesion properties of the gallium zinc oxide source/drain electrodes. The UV-ozone 16-min ZnO active layer TFT with the preferable resistivity values by Hall measurement results. The optimal UV-ozone treatment time (16 min) led to the smallest full-width at half-maximum (0.4138 °), smallest strain (2.61× 10-3) , highest thin-film density (5.78 g/cm 3) , lowest surface roughness (1.75 nm), and largest surface energy (65.3 mJ/m2). The saturation mobility, subthreshold voltage, ON/OFF current ratio, and trap density of the ZnO TFTs with optimal UV-ozone treatment were 4.54 cm2 V-1S-1 , 0.28 V/decade, 2.02 × 107 , and 2.61 × 1011 eV-1 cm-2 , respectively, indicating the potential of this structure to be applied to large-area flat-panel displays.

Original languageEnglish
Article number6802463
Pages (from-to)1403-1409
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number5
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effect of UV-ozone treatment on the performance of ZnO TFTs fabricated by RF sputtering deposition technique'. Together they form a unique fingerprint.

Cite this