Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD

Chih Jen Hsiao; Chun Kuan Liu; Sa Hoang Huynh; Thien Huu Ha Minh; Hung Wei Yu; Hong Quan Nguyen; Jer Shen Maa; Shoou Jinn Chang; Edward Yi Chang

doi:10.1109/SMELEC.2014.6920896

Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD

Chih Jen Hsiao, Chun Kuan Liu, Sa Hoang Huynh, Thien Huu Ha Minh, Hung Wei Yu, Hong Quan Nguyen, Jer Shen Maa, Shoou Jinn Chang, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.

Original language	English
Title of host publication	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	456-458
Number of pages	3
ISBN (Electronic)	9781479957606
DOIs	https://doi.org/10.1109/SMELEC.2014.6920896
Publication status	Published - 2014 Oct 10
Event	11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia Duration: 2014 Aug 27 → 2014 Aug 29

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other	11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
Country/Territory	Malaysia
City	Kuala Lumpur
Period	14-08-27 → 14-08-29

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/SMELEC.2014.6920896

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Hsiao, C. J., Liu, C. K., Huynh, S. H., Minh, T. H. H., Yu, H. W., Nguyen, H. Q., Maa, J. S., Chang, S. J., & Chang, E. Y. (2014). Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 456-458). Article 6920896 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920896

Hsiao, Chih Jen ; Liu, Chun Kuan ; Huynh, Sa Hoang et al. / Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 456-458 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

@inproceedings{8e3c1abde0c54f19b69ee3f0496220f4,

title = "Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD",

abstract = "The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.",

author = "Hsiao, {Chih Jen} and Liu, {Chun Kuan} and Huynh, {Sa Hoang} and Minh, {Thien Huu Ha} and Yu, {Hung Wei} and Nguyen, {Hong Quan} and Maa, {Jer Shen} and Chang, {Shoou Jinn} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 ; Conference date: 27-08-2014 Through 29-08-2014",

year = "2014",

month = oct,

day = "10",

doi = "10.1109/SMELEC.2014.6920896",

language = "English",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "456--458",

booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

address = "United States",

}

Hsiao, CJ, Liu, CK, Huynh, SH, Minh, THH, Yu, HW, Nguyen, HQ, Maa, JS, Chang, SJ & Chang, EY 2014, Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920896, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, Institute of Electrical and Electronics Engineers Inc., pp. 456-458, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, Malaysia, 14-08-27. https://doi.org/10.1109/SMELEC.2014.6920896

Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD. / Hsiao, Chih Jen; Liu, Chun Kuan; Huynh, Sa Hoang et al.
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 456-458 6920896 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD

AU - Hsiao, Chih Jen

AU - Liu, Chun Kuan

AU - Huynh, Sa Hoang

AU - Minh, Thien Huu Ha

AU - Yu, Hung Wei

AU - Nguyen, Hong Quan

AU - Maa, Jer Shen

AU - Chang, Shoou Jinn

AU - Chang, Edward Yi

PY - 2014/10/10

Y1 - 2014/10/10

N2 - The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.

AB - The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.

UR - http://www.scopus.com/inward/record.url?scp=84908237564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908237564&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2014.6920896

DO - 10.1109/SMELEC.2014.6920896

M3 - Conference contribution

AN - SCOPUS:84908237564

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 456

EP - 458

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014

Y2 - 27 August 2014 through 29 August 2014

ER -

Hsiao CJ, Liu CK, Huynh SH, Minh THH, Yu HW, Nguyen HQ et al. Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 456-458. 6920896. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). doi: 10.1109/SMELEC.2014.6920896

Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD

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