Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD

Chih Jen Hsiao, Chun Kuan Liu, Sa Hoang Huynh, Thien Huu Ha Minh, Hung Wei Yu, Hong Quan Nguyen, Jer Shen Maa, Shoou Jinn Chang, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages456-458
Number of pages3
ISBN (Electronic)9781479957606
DOIs
Publication statusPublished - 2014 Oct 10
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia
Duration: 2014 Aug 272014 Aug 29

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CountryMalaysia
CityKuala Lumpur
Period14-08-2714-08-29

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD'. Together they form a unique fingerprint.

Cite this