Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

Jia Ling Wu, Yu Cheng Chen, Han Yu Lin, Sheng Yuan Chu, Chia Chiang Chang, Chin Jyi Wu, Yung Der Juang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10-3 and 2.203× 10-3 to 1.74× 10-3 and 1.966× 10-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m2, respectively.

Original languageEnglish
Article number6527295
Pages (from-to)2324-2330
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume60
Issue number7
DOIs
Publication statusPublished - 2013 Jul 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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