Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

Jia Ling Wu; Yu Cheng Chen; Han Yu Lin; Sheng Yuan Chu; Chia Chiang Chang; Chin Jyi Wu; Yung Der Juang

doi:10.1109/TED.2013.2259491

Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

Jia Ling Wu, Yu Cheng Chen, Han Yu Lin, Sheng Yuan Chu, Chia Chiang Chang, Chin Jyi Wu, Yung Der Juang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10^-3 and 2.203× 10^-3 to 1.74× 10^-3 and 1.966× 10^-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m², respectively.

Original language	English
Article number	6527295
Pages (from-to)	2324-2330
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	7
DOIs	https://doi.org/10.1109/TED.2013.2259491
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2013.2259491

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Wu, J. L., Chen, Y. C., Lin, H. Y., Chu, S. Y., Chang, C. C., Wu, C. J., & Juang, Y. D. (2013). Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties. IEEE Transactions on Electron Devices, 60(7), 2324-2330. Article 6527295. https://doi.org/10.1109/TED.2013.2259491

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title = "Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties",

abstract = "ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10-3 and 2.203× 10-3 to 1.74× 10-3 and 1.966× 10-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m2, respectively.",

author = "Wu, {Jia Ling} and Chen, {Yu Cheng} and Lin, {Han Yu} and Chu, {Sheng Yuan} and Chang, {Chia Chiang} and Wu, {Chin Jyi} and Juang, {Yung Der}",

year = "2013",

doi = "10.1109/TED.2013.2259491",

language = "English",

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journal = "IEEE Transactions on Electron Devices",

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Wu, JL, Chen, YC, Lin, HY, Chu, SY, Chang, CC, Wu, CJ & Juang, YD 2013, 'Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties', IEEE Transactions on Electron Devices, vol. 60, no. 7, 6527295, pp. 2324-2330. https://doi.org/10.1109/TED.2013.2259491

Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties. / Wu, Jia Ling; Chen, Yu Cheng; Lin, Han Yu et al.
In: IEEE Transactions on Electron Devices, Vol. 60, No. 7, 6527295, 2013, p. 2324-2330.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of ZnO buffer layer on the bending durability of ZnO

T2 - Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

AU - Wu, Jia Ling

AU - Chen, Yu Cheng

AU - Lin, Han Yu

AU - Chu, Sheng Yuan

AU - Chang, Chia Chiang

AU - Wu, Chin Jyi

AU - Juang, Yung Der

PY - 2013

Y1 - 2013

N2 - ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10-3 and 2.203× 10-3 to 1.74× 10-3 and 1.966× 10-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m2, respectively.

AB - ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10-3 and 2.203× 10-3 to 1.74× 10-3 and 1.966× 10-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m2, respectively.

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Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

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