Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

Jia Ling Wu; Yu Cheng Chen; Han Yu Lin; Sheng Yuan Chu; Chia Chiang Chang; Chin Jyi Wu; Yung Der Juang

doi:10.1109/TED.2013.2259491

Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

Jia Ling Wu
, Yu Cheng Chen
, Han Yu Lin
, Sheng Yuan Chu
, Chia Chiang Chang
, Chin Jyi Wu
, Yung Der Juang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10^-3 and 2.203× 10^-3 to 1.74× 10^-3 and 1.966× 10^-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m², respectively.

Original language	English
Article number	6527295
Pages (from-to)	2324-2330
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	7
DOIs	https://doi.org/10.1109/TED.2013.2259491
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2013.2259491

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Wu, J. L., Chen, Y. C., Lin, H. Y., Chu, S. Y., Chang, C. C., Wu, C. J., & Juang, Y. D. (2013). Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties. IEEE Transactions on Electron Devices, 60(7), 2324-2330. Article 6527295. https://doi.org/10.1109/TED.2013.2259491

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title = "Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties",

abstract = "ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from \$2.063× 10-3 and 2.203× 10-3 to 1.74× 10-3 and 1.966× 10-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m2, respectively.",

author = "Wu, \{Jia Ling\} and Chen, \{Yu Cheng\} and Lin, \{Han Yu\} and Chu, \{Sheng Yuan\} and Chang, \{Chia Chiang\} and Wu, \{Chin Jyi\} and Juang, \{Yung Der\}",

year = "2013",

doi = "10.1109/TED.2013.2259491",

language = "English",

volume = "60",

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Wu, JL, Chen, YC, Lin, HY, Chu, SY, Chang, CC, Wu, CJ & Juang, YD 2013, 'Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties', IEEE Transactions on Electron Devices, vol. 60, no. 7, 6527295, pp. 2324-2330. https://doi.org/10.1109/TED.2013.2259491

Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties. / Wu, Jia Ling; Chen, Yu Cheng; Lin, Han Yu et al.
In: IEEE Transactions on Electron Devices, Vol. 60, No. 7, 6527295, 2013, p. 2324-2330.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of ZnO buffer layer on the bending durability of ZnO

T2 - Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

AU - Wu, Jia Ling

AU - Chen, Yu Cheng

AU - Lin, Han Yu

AU - Chu, Sheng Yuan

AU - Chang, Chia Chiang

AU - Wu, Chin Jyi

AU - Juang, Yung Der

PY - 2013

Y1 - 2013

N2 - ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10-3 and 2.203× 10-3 to 1.74× 10-3 and 1.966× 10-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m2, respectively.

AB - ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer layers. The strain of the samples with and without buffer layers arising from bending is studied using X-ray diffraction. After the insertion of 100-nm-thick ZnO buffer layers, the strain of GZO films without ZnO after outward and inward bending for 2000 cycles decreases from $2.063× 10-3 and 2.203× 10-3 to 1.74× 10-3 and 1.966× 10-3, respectively. Such strain variation is caused by the difference in adhesive force at the surface of 100-nm-thick ZnO/PES and PES. The surface energy of PES and 100-nm-thick ZnO/PES bent outwards and inwards for 2000 cycles increased from 34.38 and 30.56 to 36.45 and 36.03 mJ m2, respectively.

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Effect of ZnO buffer layer on the bending durability of ZnO: Ga films grown on flexible substrates: Investigation of surface energy, electrical, optical, and structural properties

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