Effect of ZnO buffer layer on the cathodoluminescence of ZnGa 2O4/ZnO phosphor screen for FED

Su Hua Yang; Ting Jen Hsueh; Shoou Jinn Chang

doi:10.1016/j.jcrysgro.2005.10.066

Effect of ZnO buffer layer on the cathodoluminescence of ZnGa ₂O₄/ZnO phosphor screen for FED

Su Hua Yang, Ting Jen Hsueh, Shoou Jinn Chang

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

A ZnGa₂O₄/ZnO phosphor screen for FED was prepared by RF magnetron sputtering. The ZnO buffer layer has a reasonable resistivity of about 5.2×10³ Ω cm and a high transparency larger than 85%. The ZnGa₂O₄ phosphor was polycrystalline on ITO, yet it was amorphous on ZnO. If the ZnGa₂O₄/ZnO phosphor screen was annealed at temperatures above 300°C, then ZnGa₂O ₄ was crystallized. Owing to the lattice mismatch between ZnGa ₂O₄ and ZnO, the grain size of ZnGa₂O ₄ on ZnO was small. As a result, the effective emission area and luminescence of the ZnGa₂O₄/ZnO phosphor screen were enhanced. Auger electron spectroscopy (AES) examination showed that atoms in ZnO did not diffuse into ZnGa₂O₄ film, and the ZnGa ₂O₄ was Zn-deficient. For charge balance, oxygen vacancy defects in the phosphor film were formed to compensate Zn deficiencies; consequently, the probability for electrons transfer from ²E _B to ⁴A₂ of Ga energy levels was improved and the luminescence of the phosphor was increased.

Original language	English
Pages (from-to)	194-198
Number of pages	5
Journal	Journal of Crystal Growth
Volume	287
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.066
Publication status	Published - 2006 Jan 18
Event	Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials - Duration: 2005 Jul 3 → 2005 Jul 8

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2005.10.066

Cite this

@article{dc578dbe36514beb8140f5d2a5539a27,

title = "Effect of ZnO buffer layer on the cathodoluminescence of ZnGa 2O4/ZnO phosphor screen for FED",

abstract = "A ZnGa2O4/ZnO phosphor screen for FED was prepared by RF magnetron sputtering. The ZnO buffer layer has a reasonable resistivity of about 5.2×103 Ω cm and a high transparency larger than 85%. The ZnGa2O4 phosphor was polycrystalline on ITO, yet it was amorphous on ZnO. If the ZnGa2O4/ZnO phosphor screen was annealed at temperatures above 300°C, then ZnGa2O 4 was crystallized. Owing to the lattice mismatch between ZnGa 2O4 and ZnO, the grain size of ZnGa2O 4 on ZnO was small. As a result, the effective emission area and luminescence of the ZnGa2O4/ZnO phosphor screen were enhanced. Auger electron spectroscopy (AES) examination showed that atoms in ZnO did not diffuse into ZnGa2O4 film, and the ZnGa 2O4 was Zn-deficient. For charge balance, oxygen vacancy defects in the phosphor film were formed to compensate Zn deficiencies; consequently, the probability for electrons transfer from 2E B to 4A2 of Ga energy levels was improved and the luminescence of the phosphor was increased.",

author = "Yang, {Su Hua} and Hsueh, {Ting Jen} and Chang, {Shoou Jinn}",

note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials ; Conference date: 03-07-2005 Through 08-07-2005",

year = "2006",

month = jan,

day = "18",

doi = "10.1016/j.jcrysgro.2005.10.066",

language = "English",

volume = "287",

pages = "194--198",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Effect of ZnO buffer layer on the cathodoluminescence of ZnGa 2O4/ZnO phosphor screen for FED

AU - Yang, Su Hua

AU - Hsueh, Ting Jen

AU - Chang, Shoou Jinn

PY - 2006/1/18

Y1 - 2006/1/18

N2 - A ZnGa2O4/ZnO phosphor screen for FED was prepared by RF magnetron sputtering. The ZnO buffer layer has a reasonable resistivity of about 5.2×103 Ω cm and a high transparency larger than 85%. The ZnGa2O4 phosphor was polycrystalline on ITO, yet it was amorphous on ZnO. If the ZnGa2O4/ZnO phosphor screen was annealed at temperatures above 300°C, then ZnGa2O 4 was crystallized. Owing to the lattice mismatch between ZnGa 2O4 and ZnO, the grain size of ZnGa2O 4 on ZnO was small. As a result, the effective emission area and luminescence of the ZnGa2O4/ZnO phosphor screen were enhanced. Auger electron spectroscopy (AES) examination showed that atoms in ZnO did not diffuse into ZnGa2O4 film, and the ZnGa 2O4 was Zn-deficient. For charge balance, oxygen vacancy defects in the phosphor film were formed to compensate Zn deficiencies; consequently, the probability for electrons transfer from 2E B to 4A2 of Ga energy levels was improved and the luminescence of the phosphor was increased.

AB - A ZnGa2O4/ZnO phosphor screen for FED was prepared by RF magnetron sputtering. The ZnO buffer layer has a reasonable resistivity of about 5.2×103 Ω cm and a high transparency larger than 85%. The ZnGa2O4 phosphor was polycrystalline on ITO, yet it was amorphous on ZnO. If the ZnGa2O4/ZnO phosphor screen was annealed at temperatures above 300°C, then ZnGa2O 4 was crystallized. Owing to the lattice mismatch between ZnGa 2O4 and ZnO, the grain size of ZnGa2O 4 on ZnO was small. As a result, the effective emission area and luminescence of the ZnGa2O4/ZnO phosphor screen were enhanced. Auger electron spectroscopy (AES) examination showed that atoms in ZnO did not diffuse into ZnGa2O4 film, and the ZnGa 2O4 was Zn-deficient. For charge balance, oxygen vacancy defects in the phosphor film were formed to compensate Zn deficiencies; consequently, the probability for electrons transfer from 2E B to 4A2 of Ga energy levels was improved and the luminescence of the phosphor was increased.

UR - http://www.scopus.com/inward/record.url?scp=29844441883&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29844441883&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.10.066

DO - 10.1016/j.jcrysgro.2005.10.066

M3 - Conference article

AN - SCOPUS:29844441883

SN - 0022-0248

VL - 287

SP - 194

EP - 198

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials

Y2 - 3 July 2005 through 8 July 2005

ER -

Effect of ZnO buffer layer on the cathodoluminescence of ZnGa ₂O₄/ZnO phosphor screen for FED

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this