Effect of ZnO buffer layer on the cathodoluminescence of ZnGa 2O4/ZnO phosphor screen for FED

Su Hua Yang, Ting Jen Hsueh, Shoou Jinn Chang

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


A ZnGa2O4/ZnO phosphor screen for FED was prepared by RF magnetron sputtering. The ZnO buffer layer has a reasonable resistivity of about 5.2×103 Ω cm and a high transparency larger than 85%. The ZnGa2O4 phosphor was polycrystalline on ITO, yet it was amorphous on ZnO. If the ZnGa2O4/ZnO phosphor screen was annealed at temperatures above 300°C, then ZnGa2O 4 was crystallized. Owing to the lattice mismatch between ZnGa 2O4 and ZnO, the grain size of ZnGa2O 4 on ZnO was small. As a result, the effective emission area and luminescence of the ZnGa2O4/ZnO phosphor screen were enhanced. Auger electron spectroscopy (AES) examination showed that atoms in ZnO did not diffuse into ZnGa2O4 film, and the ZnGa 2O4 was Zn-deficient. For charge balance, oxygen vacancy defects in the phosphor film were formed to compensate Zn deficiencies; consequently, the probability for electrons transfer from 2E B to 4A2 of Ga energy levels was improved and the luminescence of the phosphor was increased.

Original languageEnglish
Pages (from-to)194-198
Number of pages5
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2006 Jan 18
EventProceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials -
Duration: 2005 Jul 32005 Jul 8

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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