Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

C. W. Yang, Y. K. Fang, S. F. Chen, Yu-Cheng Lin, M. F. Wang, Y. M. Lin, T. H. Hou, L. G. Yao, S. C. Chen, M. S. Liang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.

Original languageEnglish
Pages (from-to)421-422
Number of pages2
JournalElectronics Letters
Volume39
Issue number5
DOIs
Publication statusPublished - 2003 Mar 6
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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