Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

C. W. Yang; Y. K. Fang; S. F. Chen; Yu-Cheng Lin; M. F. Wang; Y. M. Lin; T. H. Hou; L. G. Yao; S. C. Chen; M. S. Liang

doi:10.1049/el:20030278

Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

C. W. Yang, Y. K. Fang, S. F. Chen, Yu-Cheng Lin, M. F. Wang, Y. M. Lin, T. H. Hou, L. G. Yao, S. C. Chen, M. S. Liang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH₃ nitridation, were investigated. The results show that with NH₃ nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO₂ (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH₃ nitridation.

Original language	English
Pages (from-to)	421-422
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	5
DOIs	https://doi.org/10.1049/el:20030278
Publication status	Published - 2003 Mar 6
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20030278

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@article{43a0cf11b460407c83df019dea7e1b7a,

title = "Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation",

abstract = "The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.",

author = "Yang, {C. W.} and Fang, {Y. K.} and Chen, {S. F.} and Yu-Cheng Lin and Wang, {M. F.} and Lin, {Y. M.} and Hou, {T. H.} and Yao, {L. G.} and Chen, {S. C.} and Liang, {M. S.}",

year = "2003",

month = mar,

day = "6",

doi = "10.1049/el:20030278",

language = "English",

volume = "39",

pages = "421--422",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "5",

}

TY - JOUR

T1 - Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

AU - Yang, C. W.

AU - Fang, Y. K.

AU - Chen, S. F.

AU - Lin, Yu-Cheng

AU - Wang, M. F.

AU - Lin, Y. M.

AU - Hou, T. H.

AU - Yao, L. G.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2003/3/6

Y1 - 2003/3/6

N2 - The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.

AB - The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NH3 nitridation, were investigated. The results show that with NH3 nitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO2 (three orders reduction). Furthermore, the excellent interface quality has been evidenced by the result of immunity against soft breakdown with NH3 nitridation.

UR - http://www.scopus.com/inward/record.url?scp=0037422086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037422086&partnerID=8YFLogxK

U2 - 10.1049/el:20030278

DO - 10.1049/el:20030278

M3 - Article

AN - SCOPUS:0037422086

SN - 0013-5194

VL - 39

SP - 421

EP - 422

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

Abstract

All Science Journal Classification (ASJC) codes

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