Effective Improvements in Microstructure and Electrical Properties of the IGZO Films by Sputtering Angles

Tse Chang Li, Chung Jen Chung, Jen Fin Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Indium gallium zinc oxide (IGZO)/poly(ethylene terephthalate) (PET) specimens were prepared under inclination angles of 0°, 15°, 30°, 45°, and 60°. The film thickness, top and lateral surface morphologies, and chemical compositions were investigated by X-ray diffraction (XRD) patterns and X-ray photoelectron spectroscopy (Ga2p, Ga3d, In3d, Zn2p, and O1s). The intensity ratio (IR) is defined as the ratio of the InGaO3(ZnO)3 peak value to the sum of the peak values of InGaO3(ZnO)3 and InGaZnO4. Decompositions of O1s and Ga3d provide the Gaussian-like profiles of Ga-Ga, In4d, Ga-O, O1, O2, and O3. The ratio of the O2 peak intensity (PI) to the sum of the O1 and O2 intensities, termed IRO 2, was used as an indicator of oxygen-vacancy defects in the five specimens. An increase in the inclination angle significantly reduced surface roughness. An increase in IRO 2, due to inclination angle increase, elevated the carrier concentration, which is consistent with the increases in O2 PI often being advantageous for carrier mobility reductions. Moreover, a high IRO 2 value is unfavorable for increasing film's adhesive strength to the PET substrate.

Original languageEnglish
Pages (from-to)469-479
Number of pages11
JournalInternational Journal of Applied Ceramic Technology
Volume13
Issue number3
DOIs
Publication statusPublished - 2016 May 1

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Marketing
  • Materials Chemistry

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