Effectiveness of plasma nitrided silicon oxynitride as a barrier layer between high k materials and Si substrates

Yi Sheng Lai, J. S. Chen

Research output: Contribution to journalConference articlepeer-review

Abstract

In this work, low temperature (300 - 450°C) plasma nitridation was conducted using N2O and NH3 atmosphere to produce an ultrathin SiOxNy layer. The bonding structure, distribution, and quantity of nitrogen and their effects on the growth kinetic of SiOxNy layers are studied by X-ray photoelectron spectroscopy (XPS). It is found that nitrogen atoms pile at the SiOxNy/Si interface at the very beginning of plasma N2O and NH3 nitridation. Due to the lack of additional Si source and low diffusivity of O or N atoms at low temperature, plasma nitridation will form a self-limited growth of SiOxNy layer. Thermal stability of the interlayer between ultrathin Ta2O5films on bare Si, plasma N2O nitrided Si, and plasma NH3 nitrided Si is also studied.

Original languageEnglish
Pages (from-to)221-226
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume745
DOIs
Publication statusPublished - 2002 Jan 1
EventNovel Materials and Processes for Advanced CMOS - Boston, MA, United States
Duration: 2002 Dec 22002 Dec 4

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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