Effects of (002) β-Ta barrier on copper chemical mechanical polishing behavior

Yu Sheng Wang, Kei Wei Chen, Min Yuan Cheng, Wen-Shi Lee, Ying Lang Wang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


This study proposes that the corrosion resistance of copper film correlates well with underlying barrier's orientation. To test the hypothesis, we performed X-ray diffraction, conducted copper removal rate experiments after chemical mechanical polishing, and tested static potentiodynamic polarization. The results all show that copper deposited on strongly (002) oriented β-Ta barrier layer demonstrated better chemical resistance against surface reaction with the slurry for strong copper (111) orientation. The findings were consistent with the result of the chronoamperometric test at 0.3 V in which the more passive film formed on the composite film with (002) β-Ta underlying barrier.

Original languageEnglish
Pages (from-to)435-438
Number of pages4
JournalThin Solid Films
Publication statusPublished - 2013 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Effects of (002) β-Ta barrier on copper chemical mechanical polishing behavior'. Together they form a unique fingerprint.

Cite this