Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics

Cheng-Liang Huang, Min Hung Weng, Hui Liang Chen

Research output: Contribution to journalArticle

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Abstract

The effects of CuO, Bi2O3 and V2O5 additives (up to 3 wt.%) on the microstructures and the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics are investigated. The sintering temperature of (Zr0.8Sn0.2)TiO4 ceramics with CuO, Bi2O3 and V2O5 additions can be effectively reduced from 1400 to 1300°C due to the liquid phase effects. The grain grows at lower sintering temperatures (1300°C) to 4.5-5.4 μm with CuO, Bi2O3 or V2O5 additions. The dielectric constants (εr) are not significantly affected by various additives and ranged in 36-38. Small values (<±3 ppm°C-1) of the temperature coefficient of resonant frequency (τf) are obtained for (Zr0.8Sn0.2)TiO4 ceramics with additives. However, the unloaded quality factors Q × f are strongly dependent upon the type and the amount of additives.

Original languageEnglish
Pages (from-to)17-22
Number of pages6
JournalMaterials Chemistry and Physics
Volume71
Issue number1
DOIs
Publication statusPublished - 2001 Aug 1

Fingerprint

Dielectric properties
dielectric properties
Microwaves
ceramics
microwaves
microstructure
Microstructure
sintering
Sintering
Temperature
temperature
resonant frequencies
Q factors
Natural frequencies
liquid phases
Permittivity
permittivity
Liquids
coefficients
vanadium pentoxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics",
abstract = "The effects of CuO, Bi2O3 and V2O5 additives (up to 3 wt.{\%}) on the microstructures and the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics are investigated. The sintering temperature of (Zr0.8Sn0.2)TiO4 ceramics with CuO, Bi2O3 and V2O5 additions can be effectively reduced from 1400 to 1300°C due to the liquid phase effects. The grain grows at lower sintering temperatures (1300°C) to 4.5-5.4 μm with CuO, Bi2O3 or V2O5 additions. The dielectric constants (εr) are not significantly affected by various additives and ranged in 36-38. Small values (<±3 ppm°C-1) of the temperature coefficient of resonant frequency (τf) are obtained for (Zr0.8Sn0.2)TiO4 ceramics with additives. However, the unloaded quality factors Q × f are strongly dependent upon the type and the amount of additives.",
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Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics. / Huang, Cheng-Liang; Weng, Min Hung; Chen, Hui Liang.

In: Materials Chemistry and Physics, Vol. 71, No. 1, 01.08.2001, p. 17-22.

Research output: Contribution to journalArticle

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