Abstract
The effects of CuO, Bi2O3 and V2O5 additives (up to 3 wt.%) on the microstructures and the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics are investigated. The sintering temperature of (Zr0.8Sn0.2)TiO4 ceramics with CuO, Bi2O3 and V2O5 additions can be effectively reduced from 1400 to 1300°C due to the liquid phase effects. The grain grows at lower sintering temperatures (1300°C) to 4.5-5.4 μm with CuO, Bi2O3 or V2O5 additions. The dielectric constants (εr) are not significantly affected by various additives and ranged in 36-38. Small values (<±3 ppm°C-1) of the temperature coefficient of resonant frequency (τf) are obtained for (Zr0.8Sn0.2)TiO4 ceramics with additives. However, the unloaded quality factors Q × f are strongly dependent upon the type and the amount of additives.
| Original language | English |
|---|---|
| Pages (from-to) | 17-22 |
| Number of pages | 6 |
| Journal | Materials Chemistry and Physics |
| Volume | 71 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics. / Huang, Cheng-Liang; Weng, Min Hung; Chen, Hui Liang.
In: Materials Chemistry and Physics, Vol. 71, No. 1, 01.08.2001, p. 17-22.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics
AU - Huang, Cheng-Liang
AU - Weng, Min Hung
AU - Chen, Hui Liang
PY - 2001/8/1
Y1 - 2001/8/1
N2 - The effects of CuO, Bi2O3 and V2O5 additives (up to 3 wt.%) on the microstructures and the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics are investigated. The sintering temperature of (Zr0.8Sn0.2)TiO4 ceramics with CuO, Bi2O3 and V2O5 additions can be effectively reduced from 1400 to 1300°C due to the liquid phase effects. The grain grows at lower sintering temperatures (1300°C) to 4.5-5.4 μm with CuO, Bi2O3 or V2O5 additions. The dielectric constants (εr) are not significantly affected by various additives and ranged in 36-38. Small values (<±3 ppm°C-1) of the temperature coefficient of resonant frequency (τf) are obtained for (Zr0.8Sn0.2)TiO4 ceramics with additives. However, the unloaded quality factors Q × f are strongly dependent upon the type and the amount of additives.
AB - The effects of CuO, Bi2O3 and V2O5 additives (up to 3 wt.%) on the microstructures and the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics are investigated. The sintering temperature of (Zr0.8Sn0.2)TiO4 ceramics with CuO, Bi2O3 and V2O5 additions can be effectively reduced from 1400 to 1300°C due to the liquid phase effects. The grain grows at lower sintering temperatures (1300°C) to 4.5-5.4 μm with CuO, Bi2O3 or V2O5 additions. The dielectric constants (εr) are not significantly affected by various additives and ranged in 36-38. Small values (<±3 ppm°C-1) of the temperature coefficient of resonant frequency (τf) are obtained for (Zr0.8Sn0.2)TiO4 ceramics with additives. However, the unloaded quality factors Q × f are strongly dependent upon the type and the amount of additives.
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UR - http://www.scopus.com/inward/citedby.url?scp=0035426981&partnerID=8YFLogxK
U2 - 10.1016/S0254-0584(00)00528-9
DO - 10.1016/S0254-0584(00)00528-9
M3 - Article
VL - 71
SP - 17
EP - 22
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
IS - 1
ER -