Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure using 2-step etching process

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Kuan Jen Chen, Wen Long Wang, Sheng Joue Young, Tse Pu Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The etching scale was controled by the layball process and a focus ion beam (FIB) was used to investige the dry-wet etching (DWE) mechanism. Increasing the beam current of dry-etching raised the height of nano prominent structures, but deteriorated the interface of Ag/Si film, and even damaged the Ag film because of Ga+ bombardment. Regardless of the Ag nanoshape deposition, the residual Ag films were doped with Ga+ and were sensitive to DWE. After wet-etching, the nano hollow formed and the Ag films sunk. However, AgGa sidewall films formed by the concentration gradient and the oxidative potential and this increased the volume of microporous phases, resulting in a reduction in the depth. Also, 15-30 nm Ag nano-particles were able to enhance the DWE mechanism in the Ag/Si nanostructures.

Original languageEnglish
Pages (from-to)758-763
Number of pages6
JournalJournal of Alloys and Compounds
Volume509
Issue number3
DOIs
Publication statusPublished - 2011 Jan 21

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Dry etching
Wet etching
Etching
Nanostructures
Ion beams

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure using 2-step etching process",
abstract = "The etching scale was controled by the layball process and a focus ion beam (FIB) was used to investige the dry-wet etching (DWE) mechanism. Increasing the beam current of dry-etching raised the height of nano prominent structures, but deteriorated the interface of Ag/Si film, and even damaged the Ag film because of Ga+ bombardment. Regardless of the Ag nanoshape deposition, the residual Ag films were doped with Ga+ and were sensitive to DWE. After wet-etching, the nano hollow formed and the Ag films sunk. However, AgGa sidewall films formed by the concentration gradient and the oxidative potential and this increased the volume of microporous phases, resulting in a reduction in the depth. Also, 15-30 nm Ag nano-particles were able to enhance the DWE mechanism in the Ag/Si nanostructures.",
author = "Hu, {Zhan Shuo} and Hung, {Fei Yi} and Chang, {Shoou Jinn} and Chen, {Kuan Jen} and Wang, {Wen Long} and Young, {Sheng Joue} and Chen, {Tse Pu}",
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Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure using 2-step etching process. / Hu, Zhan Shuo; Hung, Fei Yi; Chang, Shoou Jinn; Chen, Kuan Jen; Wang, Wen Long; Young, Sheng Joue; Chen, Tse Pu.

In: Journal of Alloys and Compounds, Vol. 509, No. 3, 21.01.2011, p. 758-763.

Research output: Contribution to journalArticle

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AU - Hu, Zhan Shuo

AU - Hung, Fei Yi

AU - Chang, Shoou Jinn

AU - Chen, Kuan Jen

AU - Wang, Wen Long

AU - Young, Sheng Joue

AU - Chen, Tse Pu

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