Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition

Han Yin Liu, Che Lun Chang, Pei Huang Hsu, Wei Ting Chen, Teng Yuan Chang, Ching Sung Lee, Shun Cheng Shih, Wei Chou Hsu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This study investigates how ambient/carrier gases affect the material characteristics of amorphous indium-gallium-zinc oxide (a-InGaZnO) thin films deposited using the ultrasonic spray pyrolysis deposition (USPD) method. Nitrogen and air are used as the ambient/carrier gases in this study. The crystallinity, oxygen deficiency, energy bandgap, and trap level in the a-InGaZnO thin films are analyzed. The performance of the thin-film transistors (TFTs) based on a-InGaZnO with different ambient/carrier gases is investigated as well. It is found that oxygen deficiency is suppressed when air is used as the ambient/carrier gas. When nitrogen is used as the ambient/carrier gas to deposit a-InGaZnO thin film, the TFT shows higher field-effect mobility and saturation mobility. However, when the a-InGaZnO thin film is deposited with air as the ambient/carrier gas, the subthreshold swing, ON-/ OFF-current ratio, interface trap density, and stability of the TFT are improved. This study demonstrates how ambient/carrier gases in the USPD system affect the performance of a-InGaZnO TFT.

Original languageEnglish
Article number9420151
Pages (from-to)2729-2735
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume68
Issue number6
DOIs
Publication statusPublished - 2021 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Effects of Ambient/Carrier Gas on Amorphous InGaZnO-Based Thin-Film Transistors Using Ultrasonic Spray Pyrolysis Deposition'. Together they form a unique fingerprint.

Cite this