Effects of annealing on near-infrared shielding properties of Cs-doped tungsten oxide thin films deposited by electron beam evaporation

Chak Seng Long; Horng Hwa Lu; Ding Fwu Lii; Jow Lay Huang

doi:10.1016/j.surfcoat.2015.06.078

Effects of annealing on near-infrared shielding properties of Cs-doped tungsten oxide thin films deposited by electron beam evaporation

Chak Seng Long, Horng Hwa Lu, Ding Fwu Lii, Jow Lay Huang

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Near-infrared (NIR) shielding properties are important for solar films. In this study, Cs_xWO₃ films prepared using electron beam evaporation were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometry. The effects of annealing on NIR shielding properties and film microstructure were investigated. The results show that the NIR shielding properties of Cs_xWO₃ films can be improved by annealing at 300-450°C under pure H₂ atmosphere, the amorphous thin films being transformed to crystalline films. The Cs_xWO₃ films annealed at 450°C in pure H₂ atmosphere showed high transmittance of visible light (70%) and high NIR shielding ratio (99%).

Original language	English
Pages (from-to)	75-79
Number of pages	5
Journal	Surface and Coatings Technology
Volume	284
DOIs	https://doi.org/10.1016/j.surfcoat.2015.06.078
Publication status	Published - 2015 Dec 25

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Effects of annealing on near-infrared shielding properties of Cs-doped tungsten oxide thin films deposited by electron beam evaporation",

abstract = "Near-infrared (NIR) shielding properties are important for solar films. In this study, CsxWO3 films prepared using electron beam evaporation were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometry. The effects of annealing on NIR shielding properties and film microstructure were investigated. The results show that the NIR shielding properties of CsxWO3 films can be improved by annealing at 300-450°C under pure H2 atmosphere, the amorphous thin films being transformed to crystalline films. The CsxWO3 films annealed at 450°C in pure H2 atmosphere showed high transmittance of visible light (70%) and high NIR shielding ratio (99%).",

author = "Long, {Chak Seng} and Lu, {Horng Hwa} and Lii, {Ding Fwu} and Huang, {Jow Lay}",

year = "2015",

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doi = "10.1016/j.surfcoat.2015.06.078",

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journal = "Surface and Coatings Technology",

issn = "0257-8972",

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T1 - Effects of annealing on near-infrared shielding properties of Cs-doped tungsten oxide thin films deposited by electron beam evaporation

AU - Long, Chak Seng

AU - Lu, Horng Hwa

AU - Lii, Ding Fwu

AU - Huang, Jow Lay

PY - 2015/12/25

Y1 - 2015/12/25

N2 - Near-infrared (NIR) shielding properties are important for solar films. In this study, CsxWO3 films prepared using electron beam evaporation were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometry. The effects of annealing on NIR shielding properties and film microstructure were investigated. The results show that the NIR shielding properties of CsxWO3 films can be improved by annealing at 300-450°C under pure H2 atmosphere, the amorphous thin films being transformed to crystalline films. The CsxWO3 films annealed at 450°C in pure H2 atmosphere showed high transmittance of visible light (70%) and high NIR shielding ratio (99%).

AB - Near-infrared (NIR) shielding properties are important for solar films. In this study, CsxWO3 films prepared using electron beam evaporation were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometry. The effects of annealing on NIR shielding properties and film microstructure were investigated. The results show that the NIR shielding properties of CsxWO3 films can be improved by annealing at 300-450°C under pure H2 atmosphere, the amorphous thin films being transformed to crystalline films. The CsxWO3 films annealed at 450°C in pure H2 atmosphere showed high transmittance of visible light (70%) and high NIR shielding ratio (99%).

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