Effects of annealing on the properties of indium-tin oxide films prepared by ion beam sputtering

Ding Fwu Lii, Jow Lay Huang, Iau Jiue Jen, Su Shia Lin, Pavol Sajgalik

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

ITO films were deposited by ion beam sputtering, and was favorable to have the lang;100rang; texture with the increase of annealing time. The oxygen content decreased with the increase of annealing time, corresponding to the increase of oxygen vacancies. The electrical conductivity was primarily due to the contribution of oxygen vacancies. The resistivity decreased to a minimum of 1.77 × 10-4 Ω cm at 450 V after annealing at 500 °C for 60 min, but increased with the further increase of ion beam voltage. The carrier concentration and mobility both increased due to annealing. The optical transmission in the visible region of ITO films increased after annealing, but only slightly increased with the increase of ion beam voltage.

Original languageEnglish
Pages (from-to)106-111
Number of pages6
JournalSurface and Coatings Technology
Volume192
Issue number1
DOIs
Publication statusPublished - 2005 Mar 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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