Effects of annealing temperature and pressure of vacuum infiltration on the electrical properties of Pb(Zr0.52Ti0.48)O3 thick films prepared via a modified sol–gel method

Cheng Che Tsai, Sheng Yuan Chu, Cheng Shong Hong, Yu Chun Chien, Chun Cheng Lin

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In this study, piezoelectric Pb(Zr0.52Ti0.48)O3(Lead Zirconate Titanate PZT) thick films were fabricated on Pt-coated Si substrates via a modified sol–gel method. The method involved a uniform dispersion of PZT-based powders in sol–gel solution. This modification increased single coating thickness, reduced coating time, and improved electrical characteristics. We found that the dielectric, ferroelectric, and piezoelectric properties of the films depended on microstructure and crystallinity. Diagram models were proposed to explain these results. The size of grains that filled the surface pores of the films increased with annealing temperature. Surface roughness decreased with grain size up to a point. However, excessively large grains increased surface roughness. A secondary phase formed at 750 °C. Excessively high pressure of vacuum infiltration caused the sol–gel solution to evaporate and accumulate on the film surface, affecting microstructure and crystallinity. The optimized films, obtained with an annealing temperature of 700 °C and a vacuum pressure of 0.073 MPa (according to the pumping time), had a dielectric constant of 1542 (at 1 kHz), a dielectric loss of 0.029 (at 1 kHz), a remanent polarization Pr of 39.8 μC/cm2 (at 350 kV/cm), and an effective piezoelectric coefficient d33,f of 93.6 pm/V.

Original languageEnglish
Article number138071
JournalThin Solid Films
Publication statusPublished - 2020 Jul 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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