TY - JOUR
T1 - Effects of annealing temperature and pressure of vacuum infiltration on the electrical properties of Pb(Zr0.52Ti0.48)O3 thick films prepared via a modified sol–gel method
AU - Tsai, Cheng Che
AU - Chu, Sheng Yuan
AU - Hong, Cheng Shong
AU - Chien, Yu Chun
AU - Lin, Chun Cheng
N1 - Funding Information:
We gratefully acknowledge the financial support provided from the Ministry of Science and Technology (MOST), Taiwan , R.O.C. (Grant numbers: MOST 106-2622-E-006-019-CC3 , MOST 108-2218-E-006-013 -, MOST 108-2221-E-272 −001 -MY2 ).
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/7/31
Y1 - 2020/7/31
N2 - In this study, piezoelectric Pb(Zr0.52Ti0.48)O3(Lead Zirconate Titanate PZT) thick films were fabricated on Pt-coated Si substrates via a modified sol–gel method. The method involved a uniform dispersion of PZT-based powders in sol–gel solution. This modification increased single coating thickness, reduced coating time, and improved electrical characteristics. We found that the dielectric, ferroelectric, and piezoelectric properties of the films depended on microstructure and crystallinity. Diagram models were proposed to explain these results. The size of grains that filled the surface pores of the films increased with annealing temperature. Surface roughness decreased with grain size up to a point. However, excessively large grains increased surface roughness. A secondary phase formed at 750 °C. Excessively high pressure of vacuum infiltration caused the sol–gel solution to evaporate and accumulate on the film surface, affecting microstructure and crystallinity. The optimized films, obtained with an annealing temperature of 700 °C and a vacuum pressure of 0.073 MPa (according to the pumping time), had a dielectric constant of 1542 (at 1 kHz), a dielectric loss of 0.029 (at 1 kHz), a remanent polarization Pr of 39.8 μC/cm2 (at 350 kV/cm), and an effective piezoelectric coefficient d33,f of 93.6 pm/V.
AB - In this study, piezoelectric Pb(Zr0.52Ti0.48)O3(Lead Zirconate Titanate PZT) thick films were fabricated on Pt-coated Si substrates via a modified sol–gel method. The method involved a uniform dispersion of PZT-based powders in sol–gel solution. This modification increased single coating thickness, reduced coating time, and improved electrical characteristics. We found that the dielectric, ferroelectric, and piezoelectric properties of the films depended on microstructure and crystallinity. Diagram models were proposed to explain these results. The size of grains that filled the surface pores of the films increased with annealing temperature. Surface roughness decreased with grain size up to a point. However, excessively large grains increased surface roughness. A secondary phase formed at 750 °C. Excessively high pressure of vacuum infiltration caused the sol–gel solution to evaporate and accumulate on the film surface, affecting microstructure and crystallinity. The optimized films, obtained with an annealing temperature of 700 °C and a vacuum pressure of 0.073 MPa (according to the pumping time), had a dielectric constant of 1542 (at 1 kHz), a dielectric loss of 0.029 (at 1 kHz), a remanent polarization Pr of 39.8 μC/cm2 (at 350 kV/cm), and an effective piezoelectric coefficient d33,f of 93.6 pm/V.
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U2 - 10.1016/j.tsf.2020.138071
DO - 10.1016/j.tsf.2020.138071
M3 - Article
AN - SCOPUS:85084397719
SN - 0040-6090
VL - 706
JO - Thin Solid Films
JF - Thin Solid Films
M1 - 138071
ER -