Effects of back-contacting method and temperature on CdTe/CdS solar cells

Joel N. Duenow, Ramesh G. Dhere, Jian V. Li, Matthew R. Young, Timothy A. Gessert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages1001-1005
Number of pages5
DOIs
Publication statusPublished - 2010 Dec 20
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 2010 Jun 202010 Jun 25

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period10-06-2010-06-25

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Duenow, J. N., Dhere, R. G., Li, J. V., Young, M. R., & Gessert, T. A. (2010). Effects of back-contacting method and temperature on CdTe/CdS solar cells. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 1001-1005). [5614593] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614593