Effects of back-contacting method and temperature on CdTe/CdS solar cells

Joel N. Duenow; Ramesh G. Dhere; Jian V. Li; Matthew R. Young; Timothy A. Gessert

doi:10.1109/PVSC.2010.5614593

Effects of back-contacting method and temperature on CdTe/CdS solar cells

Joel N. Duenow
, Ramesh G. Dhere
, Jian V. Li
, Matthew R. Young
, Timothy A. Gessert

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

18 Citations (Scopus)

Abstract

In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	1001-1005
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5614593
Publication status	Published - 2010 Dec 20
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 2010 Jun 20 → 2010 Jun 25

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	10-06-20 → 10-06-25

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2010.5614593

Cite this

@inproceedings{5b5466d4a873411381ac98225dcf43eb,

title = "Effects of back-contacting method and temperature on CdTe/CdS solar cells",

abstract = "In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.",

author = "Duenow, \{Joel N.\} and Dhere, \{Ramesh G.\} and Li, \{Jian V.\} and Young, \{Matthew R.\} and Gessert, \{Timothy A.\}",

year = "2010",

month = dec,

day = "20",

doi = "10.1109/PVSC.2010.5614593",

language = "English",

isbn = "9781424458912",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1001--1005",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

}

Duenow, JN, Dhere, RG, Li, JV, Young, MR & Gessert, TA 2010, Effects of back-contacting method and temperature on CdTe/CdS solar cells. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614593, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1001-1005, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 10-06-20. https://doi.org/10.1109/PVSC.2010.5614593

Effects of back-contacting method and temperature on CdTe/CdS solar cells. / Duenow, Joel N.; Dhere, Ramesh G.; Li, Jian V. et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1001-1005 5614593 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effects of back-contacting method and temperature on CdTe/CdS solar cells

AU - Duenow, Joel N.

AU - Dhere, Ramesh G.

AU - Li, Jian V.

AU - Young, Matthew R.

AU - Gessert, Timothy A.

PY - 2010/12/20

Y1 - 2010/12/20

N2 - In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

AB - In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

UR - https://www.scopus.com/pages/publications/78650084565

UR - https://www.scopus.com/pages/publications/78650084565#tab=citedBy

U2 - 10.1109/PVSC.2010.5614593

DO - 10.1109/PVSC.2010.5614593

M3 - Conference contribution

AN - SCOPUS:78650084565

SN - 9781424458912

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1001

EP - 1005

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

Y2 - 20 June 2010 through 25 June 2010

ER -

Effects of back-contacting method and temperature on CdTe/CdS solar cells

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