Effects of back-contacting method and temperature on CdTe/CdS solar cells

Joel N. Duenow; Ramesh G. Dhere; Jian V. Li; Matthew R. Young; Timothy A. Gessert

doi:10.1109/PVSC.2010.5614593

Effects of back-contacting method and temperature on CdTe/CdS solar cells

Joel N. Duenow
, Ramesh G. Dhere
, Jian V. Li
, Matthew R. Young
, Timothy A. Gessert

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

19 Citations (Scopus)

Abstract

In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	1001-1005
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5614593
Publication status	Published - 2010 Dec 20
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 2010 Jun 20 → 2010 Jun 25

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	10-06-20 → 10-06-25

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2010.5614593

Cite this

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title = "Effects of back-contacting method and temperature on CdTe/CdS solar cells",

abstract = "In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.",

author = "Duenow, \{Joel N.\} and Dhere, \{Ramesh G.\} and Li, \{Jian V.\} and Young, \{Matthew R.\} and Gessert, \{Timothy A.\}",

year = "2010",

month = dec,

day = "20",

doi = "10.1109/PVSC.2010.5614593",

language = "English",

isbn = "9781424458912",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1001--1005",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

}

Duenow, JN, Dhere, RG, Li, JV, Young, MR & Gessert, TA 2010, Effects of back-contacting method and temperature on CdTe/CdS solar cells. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614593, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1001-1005, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 10-06-20. https://doi.org/10.1109/PVSC.2010.5614593

Effects of back-contacting method and temperature on CdTe/CdS solar cells. / Duenow, Joel N.; Dhere, Ramesh G.; Li, Jian V. et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1001-1005 5614593 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Effects of back-contacting method and temperature on CdTe/CdS solar cells

AU - Duenow, Joel N.

AU - Dhere, Ramesh G.

AU - Li, Jian V.

AU - Young, Matthew R.

AU - Gessert, Timothy A.

PY - 2010/12/20

Y1 - 2010/12/20

N2 - In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

AB - In this study, we use three common types of back contacts to CdTe-a ZnTe:Cu back-contact interface layer, a Cu/Au bilayer, and HgTe:Cu-doped graphite paste-to enable us to gain greater understanding of how back-contact processing affects the entire CdTe/CdS device. Current density-voltage (J-V) and quantum efficiency (QE) measurements are used to examine device performance and carrier collection. Variations in the CdTe net acceptor density are examined using capacitance-voltage (C-V) measurements. Temperature-dependent current density-voltage (JVT) characterization is used to investigate the back-contact barrier height. These methods enhance our understanding of contacts to CdTe and the effects of these contacts on CdTe photovoltaic devices.

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ER -

Effects of back-contacting method and temperature on CdTe/CdS solar cells

Abstract

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UN SDGs

All Science Journal Classification (ASJC) codes

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