Effects of Bi 4 Ti 3 O 12 addition on the microstructure and dielectric properties of Mn-doped BaTiO 3 -based X8R ceramics

T. A. Jain, C. C. Chen, Kuan-Zong Fung

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The effects of Bi 4 Ti 3 O 12 on the microstructure and dielectric properties of Mn-doped BaTiO 3 were studied using X-ray diffraction (XRD) and transmission electron microscope (TEM). From XRD analysis and scanning electron microscope (SEM) observations, second phase Bi 2 Ti 2 O 7 was found when the Bi 4 Ti 3 O 12 content was more than 4 mol%. The grain size was significantly enhanced with increased Bi 4 Ti 3 O 12 content. The sintering temperature of Mn-doped BaTiO 3 -based ceramics could be reduced effectively to 1200 °C by doping them with more than 1 mol% Bi 4 Ti 3 O 12 . TEM results show an obvious core-shell structure with 2 mol% Bi 4 Ti 3 O 12 , which was destroyed when the Bi 4 Ti 3 O 12 content increased from 2 to 4 mol%. It was found that the Curie temperature was shifted to a higher level and the variation of dielectric constant decreased when Bi 4 Ti 3 O 12 content increased from 0 to 2 mol%. When the Bi 4 Ti 3 O 12 content was more than 2 mol%, the Curie temperature decreased due to a change of the core-shell structure and secondary phase Bi 2 Ti 2 O 7 . The variation of dielectric constant as compared with that at room temperature was about -25% at -55 °C and less than ±10% at 150 °C. The stable temperature characteristics of the dielectric constant were caused by the presence of the core-shell grain structure. Due to the "clockwise effect", ceramic materials have great potential as EIA X8R-type multilayer ceramic capacitors.

Original languageEnglish
Pages (from-to)414-419
Number of pages6
JournalJournal of Alloys and Compounds
Volume476
Issue number1-2
DOIs
Publication statusPublished - 2009 May 12

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Dielectric properties
Permittivity
Electron microscopes
Curie temperature
Microstructure
Shells (structures)
Ceramic capacitors
Crystal microstructure
Ceramic materials
Temperature
X ray diffraction analysis
Multilayers
Sintering
Doping (additives)
Scanning
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{4ebb09cd20e74744b19e782e0a48572d,
title = "Effects of Bi 4 Ti 3 O 12 addition on the microstructure and dielectric properties of Mn-doped BaTiO 3 -based X8R ceramics",
abstract = "The effects of Bi 4 Ti 3 O 12 on the microstructure and dielectric properties of Mn-doped BaTiO 3 were studied using X-ray diffraction (XRD) and transmission electron microscope (TEM). From XRD analysis and scanning electron microscope (SEM) observations, second phase Bi 2 Ti 2 O 7 was found when the Bi 4 Ti 3 O 12 content was more than 4 mol{\%}. The grain size was significantly enhanced with increased Bi 4 Ti 3 O 12 content. The sintering temperature of Mn-doped BaTiO 3 -based ceramics could be reduced effectively to 1200 °C by doping them with more than 1 mol{\%} Bi 4 Ti 3 O 12 . TEM results show an obvious core-shell structure with 2 mol{\%} Bi 4 Ti 3 O 12 , which was destroyed when the Bi 4 Ti 3 O 12 content increased from 2 to 4 mol{\%}. It was found that the Curie temperature was shifted to a higher level and the variation of dielectric constant decreased when Bi 4 Ti 3 O 12 content increased from 0 to 2 mol{\%}. When the Bi 4 Ti 3 O 12 content was more than 2 mol{\%}, the Curie temperature decreased due to a change of the core-shell structure and secondary phase Bi 2 Ti 2 O 7 . The variation of dielectric constant as compared with that at room temperature was about -25{\%} at -55 °C and less than ±10{\%} at 150 °C. The stable temperature characteristics of the dielectric constant were caused by the presence of the core-shell grain structure. Due to the {"}clockwise effect{"}, ceramic materials have great potential as EIA X8R-type multilayer ceramic capacitors.",
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Effects of Bi 4 Ti 3 O 12 addition on the microstructure and dielectric properties of Mn-doped BaTiO 3 -based X8R ceramics . / Jain, T. A.; Chen, C. C.; Fung, Kuan-Zong.

In: Journal of Alloys and Compounds, Vol. 476, No. 1-2, 12.05.2009, p. 414-419.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of Bi 4 Ti 3 O 12 addition on the microstructure and dielectric properties of Mn-doped BaTiO 3 -based X8R ceramics

AU - Jain, T. A.

AU - Chen, C. C.

AU - Fung, Kuan-Zong

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N2 - The effects of Bi 4 Ti 3 O 12 on the microstructure and dielectric properties of Mn-doped BaTiO 3 were studied using X-ray diffraction (XRD) and transmission electron microscope (TEM). From XRD analysis and scanning electron microscope (SEM) observations, second phase Bi 2 Ti 2 O 7 was found when the Bi 4 Ti 3 O 12 content was more than 4 mol%. The grain size was significantly enhanced with increased Bi 4 Ti 3 O 12 content. The sintering temperature of Mn-doped BaTiO 3 -based ceramics could be reduced effectively to 1200 °C by doping them with more than 1 mol% Bi 4 Ti 3 O 12 . TEM results show an obvious core-shell structure with 2 mol% Bi 4 Ti 3 O 12 , which was destroyed when the Bi 4 Ti 3 O 12 content increased from 2 to 4 mol%. It was found that the Curie temperature was shifted to a higher level and the variation of dielectric constant decreased when Bi 4 Ti 3 O 12 content increased from 0 to 2 mol%. When the Bi 4 Ti 3 O 12 content was more than 2 mol%, the Curie temperature decreased due to a change of the core-shell structure and secondary phase Bi 2 Ti 2 O 7 . The variation of dielectric constant as compared with that at room temperature was about -25% at -55 °C and less than ±10% at 150 °C. The stable temperature characteristics of the dielectric constant were caused by the presence of the core-shell grain structure. Due to the "clockwise effect", ceramic materials have great potential as EIA X8R-type multilayer ceramic capacitors.

AB - The effects of Bi 4 Ti 3 O 12 on the microstructure and dielectric properties of Mn-doped BaTiO 3 were studied using X-ray diffraction (XRD) and transmission electron microscope (TEM). From XRD analysis and scanning electron microscope (SEM) observations, second phase Bi 2 Ti 2 O 7 was found when the Bi 4 Ti 3 O 12 content was more than 4 mol%. The grain size was significantly enhanced with increased Bi 4 Ti 3 O 12 content. The sintering temperature of Mn-doped BaTiO 3 -based ceramics could be reduced effectively to 1200 °C by doping them with more than 1 mol% Bi 4 Ti 3 O 12 . TEM results show an obvious core-shell structure with 2 mol% Bi 4 Ti 3 O 12 , which was destroyed when the Bi 4 Ti 3 O 12 content increased from 2 to 4 mol%. It was found that the Curie temperature was shifted to a higher level and the variation of dielectric constant decreased when Bi 4 Ti 3 O 12 content increased from 0 to 2 mol%. When the Bi 4 Ti 3 O 12 content was more than 2 mol%, the Curie temperature decreased due to a change of the core-shell structure and secondary phase Bi 2 Ti 2 O 7 . The variation of dielectric constant as compared with that at room temperature was about -25% at -55 °C and less than ±10% at 150 °C. The stable temperature characteristics of the dielectric constant were caused by the presence of the core-shell grain structure. Due to the "clockwise effect", ceramic materials have great potential as EIA X8R-type multilayer ceramic capacitors.

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