Effects of buffer layer growth conditions on GaN epilayer quality by MOCVD

Fuh Shyang Juang, Yan Kuin Su, Shoou-Jinn Chang, T. K. Chu, C. S. Chen, L. W. Chi, K. T. Lam

Research output: Contribution to journalConference article

Abstract

We have found that the electrical and optical properties of GaN epilayers strongly depend on buffer TMGa flow rates and NH3 flow rates. At low flow rate of 4 sccm, the buffer layer quality was good so the concentrations of undoped GaN epilayers decreased and a stronger band-edge emission of 362 nm can be observed in photoluminescence spectra. The carrier density of the films can be reduced from 1018 to 1017 cm-3 by increasing the NH3 flow rate from 0.5 up to 1 SLM and comparatively increased the near-band-edge emission. So, with a NH3 flow rate as high as 1 SLM, the GaN epilayers with good optical quality can be obtained. The excitation power density of He-Cd laser influences the photoluminescence property of GaN epilayers. At high excitation power density of 637 W/cm2, the near-band-edge luminescence (362 nm) is dominant and the deep level luminescence (near 550 nm) appears very weak. But at low excitation power density, the luminescence from defect yellow band levels is stronger than the near-band-edge transitions.

Original languageEnglish
Pages (from-to)218-223
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3938
Publication statusPublished - 2000 Jan 1
EventLight-Emitting Diodes: Research, Manufacturing, and Applications IV - San Jose, CA, USA
Duration: 2000 Jan 262000 Jan 27

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MOCVD
Epilayers
Metallorganic chemical vapor deposition
Buffer layers
Growth Conditions
Flow Rate
metalorganic chemical vapor deposition
Buffer
flow velocity
buffers
Flow rate
Luminescence
radiant flux density
Excitation
Photoluminescence
luminescence
excitation
photoluminescence
Electrical Properties
Optical Properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Juang, Fuh Shyang ; Su, Yan Kuin ; Chang, Shoou-Jinn ; Chu, T. K. ; Chen, C. S. ; Chi, L. W. ; Lam, K. T. / Effects of buffer layer growth conditions on GaN epilayer quality by MOCVD. In: Proceedings of SPIE - The International Society for Optical Engineering. 2000 ; Vol. 3938. pp. 218-223.
@article{cc88b29b136148ea8b948496c8429b54,
title = "Effects of buffer layer growth conditions on GaN epilayer quality by MOCVD",
abstract = "We have found that the electrical and optical properties of GaN epilayers strongly depend on buffer TMGa flow rates and NH3 flow rates. At low flow rate of 4 sccm, the buffer layer quality was good so the concentrations of undoped GaN epilayers decreased and a stronger band-edge emission of 362 nm can be observed in photoluminescence spectra. The carrier density of the films can be reduced from 1018 to 1017 cm-3 by increasing the NH3 flow rate from 0.5 up to 1 SLM and comparatively increased the near-band-edge emission. So, with a NH3 flow rate as high as 1 SLM, the GaN epilayers with good optical quality can be obtained. The excitation power density of He-Cd laser influences the photoluminescence property of GaN epilayers. At high excitation power density of 637 W/cm2, the near-band-edge luminescence (362 nm) is dominant and the deep level luminescence (near 550 nm) appears very weak. But at low excitation power density, the luminescence from defect yellow band levels is stronger than the near-band-edge transitions.",
author = "Juang, {Fuh Shyang} and Su, {Yan Kuin} and Shoou-Jinn Chang and Chu, {T. K.} and Chen, {C. S.} and Chi, {L. W.} and Lam, {K. T.}",
year = "2000",
month = "1",
day = "1",
language = "English",
volume = "3938",
pages = "218--223",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

Effects of buffer layer growth conditions on GaN epilayer quality by MOCVD. / Juang, Fuh Shyang; Su, Yan Kuin; Chang, Shoou-Jinn; Chu, T. K.; Chen, C. S.; Chi, L. W.; Lam, K. T.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3938, 01.01.2000, p. 218-223.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Effects of buffer layer growth conditions on GaN epilayer quality by MOCVD

AU - Juang, Fuh Shyang

AU - Su, Yan Kuin

AU - Chang, Shoou-Jinn

AU - Chu, T. K.

AU - Chen, C. S.

AU - Chi, L. W.

AU - Lam, K. T.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We have found that the electrical and optical properties of GaN epilayers strongly depend on buffer TMGa flow rates and NH3 flow rates. At low flow rate of 4 sccm, the buffer layer quality was good so the concentrations of undoped GaN epilayers decreased and a stronger band-edge emission of 362 nm can be observed in photoluminescence spectra. The carrier density of the films can be reduced from 1018 to 1017 cm-3 by increasing the NH3 flow rate from 0.5 up to 1 SLM and comparatively increased the near-band-edge emission. So, with a NH3 flow rate as high as 1 SLM, the GaN epilayers with good optical quality can be obtained. The excitation power density of He-Cd laser influences the photoluminescence property of GaN epilayers. At high excitation power density of 637 W/cm2, the near-band-edge luminescence (362 nm) is dominant and the deep level luminescence (near 550 nm) appears very weak. But at low excitation power density, the luminescence from defect yellow band levels is stronger than the near-band-edge transitions.

AB - We have found that the electrical and optical properties of GaN epilayers strongly depend on buffer TMGa flow rates and NH3 flow rates. At low flow rate of 4 sccm, the buffer layer quality was good so the concentrations of undoped GaN epilayers decreased and a stronger band-edge emission of 362 nm can be observed in photoluminescence spectra. The carrier density of the films can be reduced from 1018 to 1017 cm-3 by increasing the NH3 flow rate from 0.5 up to 1 SLM and comparatively increased the near-band-edge emission. So, with a NH3 flow rate as high as 1 SLM, the GaN epilayers with good optical quality can be obtained. The excitation power density of He-Cd laser influences the photoluminescence property of GaN epilayers. At high excitation power density of 637 W/cm2, the near-band-edge luminescence (362 nm) is dominant and the deep level luminescence (near 550 nm) appears very weak. But at low excitation power density, the luminescence from defect yellow band levels is stronger than the near-band-edge transitions.

UR - http://www.scopus.com/inward/record.url?scp=0033746736&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033746736&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033746736

VL - 3938

SP - 218

EP - 223

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -