This study examines the surface formation mechanism, near-surface residual stresses, phase transformations, and their interrelationships in surface grinding of silicon (100) under various chip loading conditions. Near-surface residual stresses of the ground surfaces are found to be all compressive for all chip loading conditions with the transverse residual stress more affected by the chip load. Through Raman spectra of the ground surface, it is shown that the Si-I phase tends to transform to Si-III/Si-XII at a lager chip load, and to amorphous phase at a smaller chip load. SEM surface topography reveals that the degree of plowing in surface formation increases with chip load, and that surface residual stress and phase transformation can be correlated to the extent of plowing phenomenon on the silicon surface during the material removal process. It is concluded that grinding condition with higher chip load leads to the formation of Si-III/Si-XII phases as well as a higher transverse surface residual stress while a smaller chip load is favorable in the formation of an amorphous phase and low residual stress.
|Translated title of the contribution||Effects of Chip Load on Phase Transformation and Residual Stress in Silicon Grinding|
|Original language||Chinese (Traditional)|
|Number of pages||7|
|Journal||Journal of the Chinese Society of Mechanical Engineers, Transactions of the Chinese Institute of Engineers, Series C/Chung-Kuo Chi Hsueh Kung Ch'eng Hsuebo Pao|
|Publication status||Published - 2019 Dec 1|
All Science Journal Classification (ASJC) codes
- Mechanical Engineering