Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers

Parvaneh Ravadgar, Ray Hua Horng, Shu De Yao, Hsin Ying Lee, Bing Rui Wu, Sin Liang Ou, Li Wei Tu

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

This study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivity and the cathodoluminescence (CL) properties of β-Ga2O3 epilayers. A synchrotron high-resolution X-ray technique was used to understand the crystalline structure of samples. Rutherford backscattering spectroscopy was used to determine the net chemical composition of the samples to examine the type and ratio of their possible point defects. The results show that in functional time-dependent photoresponsivity of photodetectors based on β-Ga2O3 epilayers, point defects contribution overcomes the contribution of crystallinity. However, the crystalline structure affects the intensities and emission regions of CL spectra more than point defects.

Original languageEnglish
Pages (from-to)24599-24610
Number of pages12
JournalOptics Express
Volume21
Issue number21
DOIs
Publication statusPublished - 2013 Oct 21

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Effects of crystallinity and point defects on optoelectronic applications of β-Ga<sub>2</sub>O<sub>3</sub> epilayers'. Together they form a unique fingerprint.

  • Cite this

    Ravadgar, P., Horng, R. H., Yao, S. D., Lee, H. Y., Wu, B. R., Ou, S. L., & Tu, L. W. (2013). Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers. Optics Express, 21(21), 24599-24610. https://doi.org/10.1364/OE.21.024599