TY - JOUR
T1 - Effects of crystallization on the optical properties of ZnO nano-pillar thin films by sol-gel method
AU - Chen, K. J.
AU - Hung, F. Y.
AU - Chang, S. J.
AU - Young, S. J.
AU - Hu, Z. S.
N1 - Funding Information:
The authors are grateful to National Cheng Kung University , the Center for Micro/Nano Science and Technology ( D99-2700 ) and 99-2221-E-006-132 ; NSC99-2622-E-006-033-CC3 for the financial support.
PY - 2011/9
Y1 - 2011/9
N2 - ZnO nano-pillars were prepared on the silica glass by the sol-gel method. The films were crystallized at various crystallized temperatures (600 °C, 650 °C and 700 °C) for 1 h under a pure oxygen atmosphere. The ZnO films had hexagonal structures and preferred a c-axis orientation of (002). Due to the diffused zinc atoms recombining with oxygen atoms at higher temperatures (≥650 °C), the ZnO nano-pillars grew continually from the ZnO grains or the ZnO grain boundaries. When increasing the crystallizing temperature, the quality of ZnO crystallization not only improved, but the ZnO nano-pillars also grew significantly and their length was around 30-150 nm. Notably, a severe decomposition reaction reduced the total volume of crystallization matrix (residual ZnO thin films and increased ZnO nano-pillars). The nano-pillar-thin film of 650 °C not only possessed a better crystallization, but also had the efficacy of nano-pillars that enhanced the optical characteristics. In addition, 5 at.% indium-doped ZnO was also synthesized and then compared with un-doped ZnO to clarify the contribution of indium dopants.
AB - ZnO nano-pillars were prepared on the silica glass by the sol-gel method. The films were crystallized at various crystallized temperatures (600 °C, 650 °C and 700 °C) for 1 h under a pure oxygen atmosphere. The ZnO films had hexagonal structures and preferred a c-axis orientation of (002). Due to the diffused zinc atoms recombining with oxygen atoms at higher temperatures (≥650 °C), the ZnO nano-pillars grew continually from the ZnO grains or the ZnO grain boundaries. When increasing the crystallizing temperature, the quality of ZnO crystallization not only improved, but the ZnO nano-pillars also grew significantly and their length was around 30-150 nm. Notably, a severe decomposition reaction reduced the total volume of crystallization matrix (residual ZnO thin films and increased ZnO nano-pillars). The nano-pillar-thin film of 650 °C not only possessed a better crystallization, but also had the efficacy of nano-pillars that enhanced the optical characteristics. In addition, 5 at.% indium-doped ZnO was also synthesized and then compared with un-doped ZnO to clarify the contribution of indium dopants.
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U2 - 10.1016/j.cap.2011.03.033
DO - 10.1016/j.cap.2011.03.033
M3 - Article
AN - SCOPUS:79959781858
SN - 1567-1739
VL - 11
SP - 1243
EP - 1248
JO - Current Applied Physics
JF - Current Applied Physics
IS - 5
ER -