Effects of deposition and annealing conditions on the defects in the Al/glass composites of TFT specimens

Tse Chang Li, Ming Tsung Kao, Jen Fin Lin

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Al/glass specimens are prepared following the orthogonal table of five-level six-factorial (L25(56)) design. The governing factors for the preparation of the specimens are deposition conditions, annealing temperature and annealing time. Defects, including hillocks and nanovoids, are found to be created during the annealing process. The threshold value of the annealing stress (σan) required for the incipience of hillocks is thus determined. The stress change parameter, σf–σanf :internal stress after annealing), is a positive value that increases linearly with σan. The density of hillocks increases linearly with (σf–σan) when the value of the stress change parameter is beyond the critical value (130 MPa). Nanovoids are produced even in specimens without hillocks. The wedge angle that forms in a specimen after wet etching linearly decreases with decreasing (σf–σan). A high wedge angle lowers the hillock density at the wedge slope. The electrical resistance of the gate layer linearly increases with increasing product value (R*) of the mean size (area) and the density of nanovoids. R* increases nonlinearly with increasing (σf–σan).

Original languageEnglish
Pages (from-to)4425-4433
Number of pages9
JournalJournal of Materials Science: Materials in Electronics
Volume25
Issue number10
DOIs
Publication statusPublished - 2014 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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