Effects of deposition termination on Cu2ZnSnSe4device characteristics

I. L. Repins; J. V. Li; A. Kanevce; C. L. Perkins; K. X. Steirer; J. Pankow; G. Teeter; D. Kuciauskas; C. Beall; C. Dehart; J. Carapella; B. Bob; J. S. Park; S. H. Wei

doi:10.1016/j.tsf.2014.09.028

Effects of deposition termination on Cu₂ZnSnSe₄device characteristics

I. L. Repins, J. V. Li, A. Kanevce, C. L. Perkins, K. X. Steirer, J. Pankow, G. Teeter, D. Kuciauskas, C. Beall, C. Dehart, J. Carapella, B. Bob, J. S. Park, S. H. Wei

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Co-evaporated Cu₂ZnSnSe₄(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

Original language	English
Pages (from-to)	184-187
Number of pages	4
Journal	Thin Solid Films
Volume	582
DOIs	https://doi.org/10.1016/j.tsf.2014.09.028
Publication status	Published - 2015 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2014.09.028

Fingerprint Dive into the research topics of 'Effects of deposition termination on Cu<sub>2</sub>ZnSnSe<sub>4</sub>device characteristics'. Together they form a unique fingerprint.

Cite this

@article{fb301a51e0ef4bff9c5a440ec117a28a,

title = "Effects of deposition termination on Cu2ZnSnSe4device characteristics",

abstract = "Co-evaporated Cu2ZnSnSe4(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.",

author = "Repins, {I. L.} and Li, {J. V.} and A. Kanevce and Perkins, {C. L.} and Steirer, {K. X.} and J. Pankow and G. Teeter and D. Kuciauskas and C. Beall and C. Dehart and J. Carapella and B. Bob and Park, {J. S.} and Wei, {S. H.}",

note = "Funding Information: This work was supported by the U.S. Department of Energy under Contract No. DE-AC36-08GO28308 with the National Renewable Energy Laboratory . Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",

year = "2015",

month = may,

day = "1",

doi = "10.1016/j.tsf.2014.09.028",

language = "English",

volume = "582",

pages = "184--187",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

Effects of deposition termination on Cu₂ZnSnSe₄device characteristics. / Repins, I. L.; Li, J. V.; Kanevce, A.; Perkins, C. L.; Steirer, K. X.; Pankow, J.; Teeter, G.; Kuciauskas, D.; Beall, C.; Dehart, C.; Carapella, J.; Bob, B.; Park, J. S.; Wei, S. H.

In: Thin Solid Films, Vol. 582, 01.05.2015, p. 184-187.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effects of deposition termination on Cu2ZnSnSe4device characteristics

AU - Repins, I. L.

AU - Li, J. V.

AU - Kanevce, A.

AU - Perkins, C. L.

AU - Steirer, K. X.

AU - Pankow, J.

AU - Teeter, G.

AU - Kuciauskas, D.

AU - Beall, C.

AU - Dehart, C.

AU - Carapella, J.

AU - Bob, B.

AU - Park, J. S.

AU - Wei, S. H.

N1 - Funding Information: This work was supported by the U.S. Department of Energy under Contract No. DE-AC36-08GO28308 with the National Renewable Energy Laboratory . Copyright: Copyright 2015 Elsevier B.V., All rights reserved.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - Co-evaporated Cu2ZnSnSe4(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

AB - Co-evaporated Cu2ZnSnSe4(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84926513375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926513375&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.09.028

DO - 10.1016/j.tsf.2014.09.028

M3 - Article

AN - SCOPUS:84926513375

VL - 582

SP - 184

EP - 187

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -