Effects of electrodes on the switching behavior of strontium titanate nickelate resistive random access memory

Ke Jing Lee, Li Wen Wang, Te Kung Chiang, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-based RRAM to probe the switching behavior. The bipolar resistive switching behavior of the set and reset voltages is in opposite bias in the Al/STN/ITO and Pt/STN/ITO RRAMs, which can be partly ascribed to the different work functions of top electrodes in the ITO. Analyses of the fitting results and temperature-dependent performances showed that the Al/STN/ITO switching was mainly attributed to the absorption/release of oxygen-based functional groups, whereas the Pt/STN/ITO switching can be associated with the diffusion of metal electrode ions. The Al/STN/ITO RRAM demonstrated a high resistance ratio of >106 between the high-resistance state (HRS) and the low-resistance state (LRS), as well as a retention ability of >105 s. Furthermore, the Pt/STN/ITO RRAM displayed a HRS/LRS resistance ratio of >103 and a retention ability of >105 s.

Original languageEnglish
Pages (from-to)7191-7198
Number of pages8
JournalMaterials
Volume8
Issue number10
DOIs
Publication statusPublished - 2015

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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