Effects of electromigration on grain rotation behavior of SnAg solders

Han Wen Lin; Chih Chen; J. C. Kuo; C. C. Chen

doi:10.1109/IMPACT.2009.5382151

Effects of electromigration on grain rotation behavior of SnAg solders

Han Wen Lin, Chih Chen, J. C. Kuo, C. C. Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The requirement for smaller devices but with much greater performance leads to a boost in current density and damage caused by electromigration. Recently, some researches show that the grain orientation changes during current stressing. In this study, the solder of SnAg2.6 with 2um-thick UBM layer of Ni and 20um-thick copper pad is used. Electron Backscattered Diffraction (EBSD) is applied to investigate the grain orientation in the entire solder joint during electromigration. Semi-In-situ observations are to determine the rate of change on grain orientation of tin. We can analysis these data at the same time to understand the relationship between the rotation rate of tin grain orientations and the current density applied on it. The analysis for current density in solders is accomplished by finite element simulation result. So far, based on our preliminary result, there are obvious grain rotations when they are subjected to current stressing and detailed results will be presented in the conference.

Original language	English
Title of host publication	IMPACT Conference 2009 International 3D IC Conference - Proceedings
Pages	166-168
Number of pages	3
DOIs	https://doi.org/10.1109/IMPACT.2009.5382151
Publication status	Published - 2009 Dec 1
Event	IMPACT Conference 2009 International 3D IC Conference - Taipei, Taiwan Duration: 2009 Oct 21 → 2009 Oct 23

Publication series

Name	IMPACT Conference 2009 International 3D IC Conference - Proceedings

Other

Other	IMPACT Conference 2009 International 3D IC Conference
Country	Taiwan
City	Taipei
Period	09-10-21 → 09-10-23

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IMPACT.2009.5382151

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Lin, H. W., Chen, C., Kuo, J. C., & Chen, C. C. (2009). Effects of electromigration on grain rotation behavior of SnAg solders. In IMPACT Conference 2009 International 3D IC Conference - Proceedings (pp. 166-168). [5382151] (IMPACT Conference 2009 International 3D IC Conference - Proceedings). https://doi.org/10.1109/IMPACT.2009.5382151

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title = "Effects of electromigration on grain rotation behavior of SnAg solders",

abstract = "The requirement for smaller devices but with much greater performance leads to a boost in current density and damage caused by electromigration. Recently, some researches show that the grain orientation changes during current stressing. In this study, the solder of SnAg2.6 with 2um-thick UBM layer of Ni and 20um-thick copper pad is used. Electron Backscattered Diffraction (EBSD) is applied to investigate the grain orientation in the entire solder joint during electromigration. Semi-In-situ observations are to determine the rate of change on grain orientation of tin. We can analysis these data at the same time to understand the relationship between the rotation rate of tin grain orientations and the current density applied on it. The analysis for current density in solders is accomplished by finite element simulation result. So far, based on our preliminary result, there are obvious grain rotations when they are subjected to current stressing and detailed results will be presented in the conference.",

author = "Lin, {Han Wen} and Chih Chen and Kuo, {J. C.} and Chen, {C. C.}",

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Lin, HW, Chen, C, Kuo, JC & Chen, CC 2009, Effects of electromigration on grain rotation behavior of SnAg solders. in IMPACT Conference 2009 International 3D IC Conference - Proceedings., 5382151, IMPACT Conference 2009 International 3D IC Conference - Proceedings, pp. 166-168, IMPACT Conference 2009 International 3D IC Conference, Taipei, Taiwan, 09-10-21. https://doi.org/10.1109/IMPACT.2009.5382151

Effects of electromigration on grain rotation behavior of SnAg solders. / Lin, Han Wen; Chen, Chih; Kuo, J. C.; Chen, C. C.

IMPACT Conference 2009 International 3D IC Conference - Proceedings. 2009. p. 166-168 5382151 (IMPACT Conference 2009 International 3D IC Conference - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - The requirement for smaller devices but with much greater performance leads to a boost in current density and damage caused by electromigration. Recently, some researches show that the grain orientation changes during current stressing. In this study, the solder of SnAg2.6 with 2um-thick UBM layer of Ni and 20um-thick copper pad is used. Electron Backscattered Diffraction (EBSD) is applied to investigate the grain orientation in the entire solder joint during electromigration. Semi-In-situ observations are to determine the rate of change on grain orientation of tin. We can analysis these data at the same time to understand the relationship between the rotation rate of tin grain orientations and the current density applied on it. The analysis for current density in solders is accomplished by finite element simulation result. So far, based on our preliminary result, there are obvious grain rotations when they are subjected to current stressing and detailed results will be presented in the conference.

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