Effects of Film Orientation on Power Consumption, Thermal Stability, and Reliability of Aluminum Nitride Resistive Random Access Memory Devices

Chun Cheng Lin, Huei Yu Liou, Pei Hao Hung, Sheng Yuan Chu, Chih Yu Huang, Cheng Shong Hong

Research output: Contribution to journalArticle

Abstract

The power consumption (PC), window margin (WM), thermal stability (TS), and reliability [i.e., endurance (EN) and retention-time (RT)] of aluminum nitride (AlN) resistive random access memory (RRAM) devices with different film orientations [i.e., amorphous, (100)-and (002)-oriented] are investigated. It is shown that the charge carrier transport mechanism of the three devices is dominated by Ohmic behavior under low electric fields and the trap-controlled space charge limited current (TC-SCLC) model under high electric fields. Among the three devices, the (002)-oriented AlN sample provides the best overall PC, WM, TS, EN, and RT performance due to its c-axis orientation, which is favorable for the formation and rupture of the vertically arranged conductive filaments (CFS) in the AlN film.

Original languageEnglish
Article number8845656
Pages (from-to)4716-4721
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number11
DOIs
Publication statusPublished - 2019 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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