Abstract
The effects of silicon fin width on the electrostatic characteristics of high-κ/metal gate bulk fin field-effect transistor (FinFET) devices are investigated. Six devices with different layout fin widths and lengths are designed and fabricated. A technology computer-aided design (TCAD) simulation model with the proposed devices simplified as an equivalent circuit with three components (Cox, Cs and Rs) indicates that for a given layout area, a narrower fin width leads to a worse flat band voltage shift and larger variation of gate capacitance due to increased substrate resistance.
Original language | English |
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Pages (from-to) | 1160-1162 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 50 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2014 Jul 31 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering