Effects of fluorination of carbon film and annealing conditions on side leakage current and current breakdown time of SiO2/graphene/Cu/Ti/SiO2/Si specimens

Chang Shuo Chang, Han Che Cheng, Chang Fu Han, Chao Sung Lai, Jen Fin Lin

Research output: Contribution to journalArticle

Abstract

Efforts are made to grow a few-layer graphene film over copper micro-interconnects to reduce the electrical resistance and improve the impediment of current breakdown. The annealing conditions for successful graphene growth and the effective method for the minimization of side leakage current between adjacent copper wires become the challenges for the targets. Copper micro-interconnects deposited on an Si wafer substrate with a SiO2 as the top dielectric layer are prepared using lithography with an ultrathin carbon film between the copper wire and SiO2 layer. The annealing conditions in the process of converting carbon into graphene are set with consideration of the preservation of copper wires and enhancement of the intensity of the Raman signal of graphene. Carbon films between adjacent copper microwires are converted into CFx by fluorination to impede side leakage current from the interconnects. A sufficiently low chamber vacuum pressure and large hydrogen flow rate can increase graphene intensity and thus impede the side leakage current effectively. Specimens with few-layer graphene have a higher voltage and a longer time needed for current breakdown. In tests without current breakdown, the thermal diffusion intensity of copper ions into SiO2 layer and the electrical resistance of the specimen with few-layer graphene are greatly reduced indeed.

Original languageEnglish
Article number109037
JournalVacuum
Volume172
DOIs
Publication statusPublished - 2020 Feb

Fingerprint

Fluorination
fluorination
Graphite
Carbon films
Leakage currents
Graphene
Copper
graphene
leakage
breakdown
Annealing
copper
annealing
carbon
Acoustic impedance
wire
Wire
electrical resistance
Thermal diffusion
Ultrathin films

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

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abstract = "Efforts are made to grow a few-layer graphene film over copper micro-interconnects to reduce the electrical resistance and improve the impediment of current breakdown. The annealing conditions for successful graphene growth and the effective method for the minimization of side leakage current between adjacent copper wires become the challenges for the targets. Copper micro-interconnects deposited on an Si wafer substrate with a SiO2 as the top dielectric layer are prepared using lithography with an ultrathin carbon film between the copper wire and SiO2 layer. The annealing conditions in the process of converting carbon into graphene are set with consideration of the preservation of copper wires and enhancement of the intensity of the Raman signal of graphene. Carbon films between adjacent copper microwires are converted into CFx by fluorination to impede side leakage current from the interconnects. A sufficiently low chamber vacuum pressure and large hydrogen flow rate can increase graphene intensity and thus impede the side leakage current effectively. Specimens with few-layer graphene have a higher voltage and a longer time needed for current breakdown. In tests without current breakdown, the thermal diffusion intensity of copper ions into SiO2 layer and the electrical resistance of the specimen with few-layer graphene are greatly reduced indeed.",
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Effects of fluorination of carbon film and annealing conditions on side leakage current and current breakdown time of SiO2/graphene/Cu/Ti/SiO2/Si specimens. / Chang, Chang Shuo; Cheng, Han Che; Han, Chang Fu; Lai, Chao Sung; Lin, Jen Fin.

In: Vacuum, Vol. 172, 109037, 02.2020.

Research output: Contribution to journalArticle

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