TY - GEN
T1 - Effects of gallium on wettability, microstructures and mechanical properties of the Sn-Zn-Ag-Ga and Sn-Zn-Ag-Al-Ga solder alloys
AU - Chen, Kang I.
AU - Lin, Kwang Lung
PY - 2002/1/1
Y1 - 2002/1/1
N2 - The microstructures and mechanical properties of Sn-8.55Zn-0.5 Ag-0.45Al -yGa (wt %) and wetting behavior of Sn-8.55Zn-0.5Ag-yGa (wt %) lead-free solders were investigated. The Ga content, y, of the solders investigated were 0.5 wt % ∼3.0 wt %. The results indicate that Ga plays an important role not only in the structure and wetting behavior, but also in the mechanical properties. The mechanical properties and DSC behavior were compared with that of 63Sn-37Pb and Sn-9Zn solders. Ga lowers the melting point of the Sn-8.55Zn-0.5Ag-0.45Al-yGa solders. The Sn-8.55Zn-0.5Ag-0.45Al-0.5Ga solders exhibit greater strength and better ductility than the 63Sn-37Pb.
AB - The microstructures and mechanical properties of Sn-8.55Zn-0.5 Ag-0.45Al -yGa (wt %) and wetting behavior of Sn-8.55Zn-0.5Ag-yGa (wt %) lead-free solders were investigated. The Ga content, y, of the solders investigated were 0.5 wt % ∼3.0 wt %. The results indicate that Ga plays an important role not only in the structure and wetting behavior, but also in the mechanical properties. The mechanical properties and DSC behavior were compared with that of 63Sn-37Pb and Sn-9Zn solders. Ga lowers the melting point of the Sn-8.55Zn-0.5Ag-0.45Al-yGa solders. The Sn-8.55Zn-0.5Ag-0.45Al-0.5Ga solders exhibit greater strength and better ductility than the 63Sn-37Pb.
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U2 - 10.1109/EMAP.2002.1188812
DO - 10.1109/EMAP.2002.1188812
M3 - Conference contribution
AN - SCOPUS:84966501452
T3 - Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
SP - 49
EP - 54
BT - Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
Y2 - 4 December 2002 through 6 December 2002
ER -