Abstract
For low-power and low-temperature microwave plasma CVD of UNCD in gas mixtures of methane and argon without hydrogen and oxygen additives, excessive carbon containing species often induce gas phase synthesis of non-diamond carbon phases, which fall on diamond growing surfaces to become part of the deposited diamond films. To prevent undesirable gas phase reactions, effects of gas residence time, or equivalently, the total gas flow rate at a fixed gas pressure and compositions, on the microwave plasma and its deposition of UNCD are studied. The gas residence time is increased by by-passing an increasing amount of a pre-set mixture of methane and argon at a fixed total flow rate through a mass flow controller to a vacuum pump while allowing the rest of the gas feed to flow through the reaction chamber. The gas composition, gas pressure, microwave power, and substrate temperature are kept constant. Optimization of the UNCD growth is, thus, achieved by increasing the gas residence time to deposit UNCD of high phase purity.
| Original language | English |
|---|---|
| Pages (from-to) | 153-157 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 24 |
| DOIs | |
| Publication status | Published - 2012 Apr 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
}
Effects of gas residence time on microwave plasma enhanced CVD of ultrananocrystalline diamond in mixtures of methane and argon without hydrogen or oxygen additives. / Jiang, Ji Heng; Chu, Yueh Chieh; Fang, Wei Cheng; Chen, Shih Tse; Tzeng, Yon-Hua.
In: Diamond and Related Materials, Vol. 24, 01.04.2012, p. 153-157.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of gas residence time on microwave plasma enhanced CVD of ultrananocrystalline diamond in mixtures of methane and argon without hydrogen or oxygen additives
AU - Jiang, Ji Heng
AU - Chu, Yueh Chieh
AU - Fang, Wei Cheng
AU - Chen, Shih Tse
AU - Tzeng, Yon-Hua
PY - 2012/4/1
Y1 - 2012/4/1
N2 - For low-power and low-temperature microwave plasma CVD of UNCD in gas mixtures of methane and argon without hydrogen and oxygen additives, excessive carbon containing species often induce gas phase synthesis of non-diamond carbon phases, which fall on diamond growing surfaces to become part of the deposited diamond films. To prevent undesirable gas phase reactions, effects of gas residence time, or equivalently, the total gas flow rate at a fixed gas pressure and compositions, on the microwave plasma and its deposition of UNCD are studied. The gas residence time is increased by by-passing an increasing amount of a pre-set mixture of methane and argon at a fixed total flow rate through a mass flow controller to a vacuum pump while allowing the rest of the gas feed to flow through the reaction chamber. The gas composition, gas pressure, microwave power, and substrate temperature are kept constant. Optimization of the UNCD growth is, thus, achieved by increasing the gas residence time to deposit UNCD of high phase purity.
AB - For low-power and low-temperature microwave plasma CVD of UNCD in gas mixtures of methane and argon without hydrogen and oxygen additives, excessive carbon containing species often induce gas phase synthesis of non-diamond carbon phases, which fall on diamond growing surfaces to become part of the deposited diamond films. To prevent undesirable gas phase reactions, effects of gas residence time, or equivalently, the total gas flow rate at a fixed gas pressure and compositions, on the microwave plasma and its deposition of UNCD are studied. The gas residence time is increased by by-passing an increasing amount of a pre-set mixture of methane and argon at a fixed total flow rate through a mass flow controller to a vacuum pump while allowing the rest of the gas feed to flow through the reaction chamber. The gas composition, gas pressure, microwave power, and substrate temperature are kept constant. Optimization of the UNCD growth is, thus, achieved by increasing the gas residence time to deposit UNCD of high phase purity.
UR - http://www.scopus.com/inward/record.url?scp=84862827931&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862827931&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2012.01.003
DO - 10.1016/j.diamond.2012.01.003
M3 - Article
VL - 24
SP - 153
EP - 157
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
ER -