Effects of H2 in GaN barrier spacer layer of InGaN/GaN multiple quantum-well light-emitting diodes

Wei Chih Lai, Ya Yu Yang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We demonstrate the optoelectrical characteristics of thick well short-period InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with H2 in GaN barrier spacer layer. Introducing ramped H}} 2 in the GaN barrier spacer layer creates a wide range of severe well thickness variation randomly distributed in the thick InGaN well. The thickness-fluctuated InGaN well would effectively increase the carrier concentration in the region of the thick InGaN well region during the current injection. Moreover, the ramped H2 in GaN barrier spacer layer would improve the interface and crystal quality of thick well short-period InGaN/GaN MQWs LEDs. Therefore, compared with traditional long-period InGaN/GaN MQW LEDs, thick well short-period InGaN/GaN MQW LEDs with fluctuated InGaN well thickness enhance output power (25.6% at 20 mA) and improve efficiency droop from 55.0% to 36.7%.

Original languageEnglish
Article number6374703
Pages (from-to)234-238
Number of pages5
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number4
DOIs
Publication statusPublished - 2013 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Effects of H<sub>2</sub> in GaN barrier spacer layer of InGaN/GaN multiple quantum-well light-emitting diodes'. Together they form a unique fingerprint.

Cite this